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arXiv · 1511.07680

Field Effect Transistors with Sub-Micrometer Gate Lengths Fabricated from LaAlO$_3$-SrTiO$_3$-Based Heterostructures

C. Woltmann·T. Harada·H. Boschker·V. Srot·P. A. van Aken·H. Klauk·J. Mannhart
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Abstract

The possible existence of short-channel effects in oxide field-effect transistors is investigated by exploring field-effect transistors with various gate lengths fabricated from LaAlO$_3$-SrTiO$_3$ heterostructures. The studies reveal the existence of channel-length modulation and drain-induced barrier lowering for gate lengths below 1 μm, with a characteristic behavior comparable to semiconducting devices. With the fabrication of field-effect transistors with gate lengths as small as 60 nm the results demonstrate the possibility to fabricate by electron-beam lithography functional devices based on complex oxides with characteristic lengths of several ten nanometers.

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C. Woltmann, T. Harada, H. Boschker, V. Srot, P. A. van Aken, H. Klauk, J. Mannhart. 2015-11-24. Field Effect Transistors with Sub-Micrometer Gate Lengths Fabricated from LaAlO$_3$-SrTiO$_3$-Based Heterostructures. https://doi.org/10.1103/physrevapplied.4.064003

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