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arXiv · 1605.04818

Decoupling edge versus bulk conductance in the trivial regime of an InAs/GaSb double quantum well using Corbino ring geometry

Binh-Minh Nguyen·Andrey A. Kiselev·Ramsey Noah·Wei Yi·Fanming Qu·Arjan J. A. Beukman·Folkert K. de Vries·Jasper van Veen·Stevan Nadj-Perge·Leo P. Kouwenhoven·Morten Kjaergaard·Henri J. Suominen·Fabrizio Nichele·Charles M. Marcus·Michael J. Manfra·Marko Sokolich
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Abstract

A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically-predicted topological system with a temperature insensitive linear resistivity per unit length in the range of 2 kOhm/um. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n-type.

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Binh-Minh Nguyen, Andrey A. Kiselev, Ramsey Noah, Wei Yi, Fanming Qu, Arjan J. A. Beukman, Folkert K. de Vries, Jasper van Veen, Stevan Nadj-Perge, Leo P. Kouwenhoven, Morten Kjaergaard, Henri J. Suominen, Fabrizio Nichele, Charles M. Marcus, Michael J. Manfra, Marko Sokolich. 2016-05-16. Decoupling edge versus bulk conductance in the trivial regime of an InAs/GaSb double quantum well using Corbino ring geometry. https://doi.org/10.1103/physrevlett.117.077701

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