arXiv subjects

Jasper van Veen

Publications and source records attributed to Jasper van Veen.

10 recordsLinked to original sources

arXiv2024

Hard superconducting gap in InSb nanowires

Topological superconductivity is a state of matter that can host Majorana modes, the building blocks of a topological quantum computer. Many experimental platforms predicted to show such a topological state rely on proximity-induced superconductivity. However, accessing the topological properties requires an induced hard superconducting gap, which is challenging to achieve for most material systems. We have systematically studied how the interface between an InSb semiconductor nanowire and a NbTiN superconductor affects the induced superconducting properties. Step by step, we improve the homogeneity of the interface while ensuring a barrier-free electrical contact to the superconductor, and obtain a hard gap in the InSb nanowire. The magnetic field stability of NbTiN allows the InSb nanowire to maintain a hard gap and a supercurrent in the presence of magnetic fields (~ 0.5 Tesla), a requirement for topological superconductivity in one-dimensional systems. Our study provides a guideline to induce superconductivity in various experimental platforms such as semiconductor nanowires, two dimensional electron gases and topological insulators, and holds relevance for topological superconductivity and quantum computation.

cond-mat.mes-hall↗

arXiv2019

Revealing charge-tunneling processes between a quantum dot and a superconducting island through gate sensing

We report direct detection of charge-tunneling between a quantum dot and a superconducting island through radio-frequency gate sensing. We are able to resolve spin-dependent quasiparticle tunneling as well as two-particle tunneling involving Cooper pairs. The quantum dot can act as an RF-only sensor to characterize the superconductor addition spectrum, enabling us to access subgap states without transport. Our results provide guidance for future dispersive parity measurements of Majorana modes, which can be realized by detecting the parity-dependent tunneling between dots and islands.

cond-mat.mes-hall↗

arXiv2018

Rapid detection of coherent tunneling in an InAs nanowire quantum dot through dispersive gate sensing

Dispersive sensing is a powerful technique that enables scalable and high-fidelity readout of solid-state quantum bits. In particular, gate-based dispersive sensing has been proposed as the readout mechanism for future topological qubits, which can be measured by single electrons tunneling through zero-energy modes. The development of such a readout requires resolving the coherent charge tunneling amplitude from a quantum dot in a Majorana-zero-mode host system faithfully on short time scales. Here, we demonstrate rapid single-shot detection of a coherent single-electron tunneling amplitude between InAs nanowire quantum dots. We have realized a sensitive dispersive detection circuit by connecting a sub-GHz, lumped element microwave resonator to a high-lever arm gate on one of dots. The resulting large dot-resonator coupling leads to an observed dispersive shift that is of the order of the resonator linewidth at charge degeneracy. This shift enables us to differentiate between Coulomb blockade and resonance, corresponding to the scenarios expected for qubit state readout, with a signal to noise ratio exceeding 2 for an integration time of 1 microsecond. Our result paves the way for single shot measurements of fermion parity on microsecond timescales in topological qubits.

cond-mat.mes-hall↗

arXiv2018

Observation of 2e-periodic Supercurrents in Nanowire Single-Cooper-Pair Transistors

Parity control of superconducting islands hosting Majorana zero modes (MZMs) is required to operate topological qubits made from proximitized semiconductor nanowires. We, therefore, study parity effects in hybrid InAs-Al single-Cooper-pair transistors (SCPTs) as a first step. In particular, we investigate the gate-charge supercurrent modulation and observe a consistent 2$e$-periodic pattern indicating a general lack of low-energy subgap states in these nanowires at zero magnetic field. In a parallel magnetic field, an even-odd pattern develops with a gate-charge spacing that oscillates as a function of field demonstrating that the modulation pattern is sensitive to the presence of a single subgap state. In addition, we find that the parity lifetime of the SCPT decreases exponentially with magnetic field as the subgap state approaches zero energy. Our work highlights the important role that intentional quasiparticle traps and superconducting gap engineering would play in topological qubits that require quenching of the island charge dispersion.

cond-mat.mes-hall↗

arXiv2017

$h/e$ superconducting quantum interference through trivial edge states in InAs

Josephson junctions defined in strong spin orbit semiconductors are highly interesting for the search for topological systems. However, next to topological edge states that emerge in a sufficient magnetic field, trivial edge states can also occur. We study the trivial edge states with superconducting quantum interference measurements on non-topological InAs Josephson junctions. We observe a SQUID pattern, an indication of superconducting edge transport. Also, a remarkable $h/e$ SQUID signal is observed that, as we find, stems from crossed Andreev states.

cond-mat.mes-hall↗

arXiv2017

Ballistic superconductivity in semiconductor nanowires

Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here, we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor which enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices.

cond-mat.mes-hall↗

arXiv2017

Spin-orbit interaction in a dual gated InAs/GaSb quantum well

Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regime the linear Dresselhaus strength is characterized by $β=$ 28.5 meV$Å$ and the Rashba coefficient $α$ is tuned from 75 to 53 meV$Å$ by changing the electric field. In the two-carriers regime the spin splitting shows a nonmonotonic behavior with gate voltage, which is consistent with our band structure calculations.

cond-mat.mes-hall↗

arXiv2016

Quantized conductance and large g-factor anisotropy in InSb quantum point contacts

Due to a strong spin-orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum wells. Using a rotating magnetic field, we observe a large in-plane (|g1|=26) and out-of-plane (|g1|=52) g-factor anisotropy. Additionally, we investigate crossings of subbands with opposite spins and extract the electron effective mass from magnetic depopulation of one-dimensional subbands.

cond-mat.mes-hall↗

arXiv2016

Edge Transport in the Trivial Phase of InAs/GaSb

We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivial regime, bulk conductivity is quenched but transport persists along the edges, superficially resembling the predicted helical edge-channels in the topological regime. We characterize edge conduction in the trivial regime in a wide variety of sample geometries and measurement configurations, as a function of temperature, magnetic field, and edge length. Despite similarities to studies claiming measurements of helical edge channels, our characterization points to a non-topological origin for these observations.

cond-mat.mes-hall↗

arXiv2016

Decoupling edge versus bulk conductance in the trivial regime of an InAs/GaSb double quantum well using Corbino ring geometry

A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically-predicted topological system with a temperature insensitive linear resistivity per unit length in the range of 2 kOhm/um. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n-type.

cond-mat.mes-hall↗