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arXiv · 1605.07599

A CMOS silicon spin qubit

R. Maurand·X. Jehl·D. Kotekar Patil·A. Corna·H. Bohuslavskyi·R. Laviéville·L. Hutin·S. Barraud·M. Vinet·M. Sanquer·S. De Franceschi
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Abstract

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot (QD) encoding a hole spin qubit, the second one a QD used for the qubit readout. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. Our result opens a viable path to qubit up-scaling through a readily exploitable CMOS platform.

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R. Maurand, X. Jehl, D. Kotekar Patil, A. Corna, H. Bohuslavskyi, R. Laviéville, L. Hutin, S. Barraud, M. Vinet, M. Sanquer, S. De Franceschi. 2016-05-24. A CMOS silicon spin qubit. https://doi.org/10.1038/ncomms13575

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