Repeatable Room Temperature Negative Differential Conductance in GaN/AlN Resonant Tunneling Diodes

Jimy Encomendero; Faiza Afroz Faria; S. M. Islam; Vladimir Protasenko; Sergei Rouvimov; Patrick Fay; Debdeep Jena; Huili Grace Xing

doi:10.1103/physrevx.7.041017

arXiv · 1606.08100

Repeatable Room Temperature Negative Differential Conductance in GaN/AlN Resonant Tunneling Diodes

Jimy Encomendero·Faiza Afroz Faria·S. M. Islam·Vladimir Protasenko·Sergei Rouvimov·Patrick Fay·Debdeep Jena·Huili Grace Xing

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Abstract

Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tunneling diodes were fabricated; room temperature current-voltage measurements reveal the presence of a negative differential conductance region under forward bias with peak current densities of ~6.4 $kA/cm^2$ and a peak to valley current ratio of ~1.3. Reverse bias operation presents a characteristic turn-on threshold voltage intimately linked to the polarization fields present in the heterostructure. An analytic electrostatic model is developed to capture the unique features of polar-heterostructure-based resonant tunneling diodes; both the resonant and threshold voltages are derived as a function of the design parameters and polarization fields. Subsequent measurements confirm the repeatability of the negative conductance and demonstrate that III-nitride tunneling heterostructures are capable of robust resonant transport at room temperature.

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Jimy Encomendero, Faiza Afroz Faria, S. M. Islam, Vladimir Protasenko, Sergei Rouvimov, Patrick Fay, Debdeep Jena, Huili Grace Xing. 2016-06-26. Repeatable Room Temperature Negative Differential Conductance in GaN/AlN Resonant Tunneling Diodes. https://doi.org/10.1103/physrevx.7.041017

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