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arXiv · 1607.04065

Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene

Fan W. Chen·Hesameddin Ilatikhameneh·Tarek A. Ameen·Gerhard Klimeck·Rajib Rahman
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Abstract

Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg). Unlike the conventional hetero-junction TFETs, TE-TFET uses spatially varying layer thickness to form a hetero-junction. This offers advantages by avoiding the interface states and lattice mismatch problems. Furthermore, it boosts the ON-current to 1280$\mu A/\mu m$ for 15nm channel length. TE-TFET shows a channel length scalability down to 9nm with constant field scaling $E = V_{DD}/L_{ch}= 30V/nm$. Providing a higher ON current, phosphorene TE-TFET outperforms the homojunction phosphorene TFET and the TMD TFET in terms of extrinsic energy-delay product. In this work, the operation principles of TE-TFET and its performance sensitivity to the design parameters are investigated by the means of full-band atomistic quantum transport simulation.

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Fan W. Chen, Hesameddin Ilatikhameneh, Tarek A. Ameen, Gerhard Klimeck, Rajib Rahman. 2016-07-14. Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene. https://doi.org/10.1109/led.2016.2627538

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