Nano strain-amplifier: making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects

Hoang-Phuong Phan; Toan Dinh; Takahiro Kozeki; Tuan-Khoa Nguyen; Afzaal Qamar; Takahiro Namazu; Nam-Trung Nguyen; Dzung Viet Dao

doi:10.1063/1.4963258

arXiv · 1607.04531

Nano strain-amplifier: making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects

Hoang-Phuong Phan·Toan Dinh·Takahiro Kozeki·Tuan-Khoa Nguyen·Afzaal Qamar·Takahiro Namazu·Nam-Trung Nguyen·Dzung Viet Dao

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Abstract

This paper presents an innovative nano strain-amplifier employed to significantly enhance the sensitivity of piezoresistive strain sensors. Inspired from the dogbone structure, the nano strain-amplifier consists of a nano thin frame released from the substrate, where nanowires were formed at the centre of the frame. Analytical and numerical results indicated that a nano strain-amplifier significantly increases the strain induced into a free standing nanowire, resulting in a large change in their electrical conductance. The proposed structure was demonstrated in p-type cubic silicon carbide nanowires fabricated using a top down process. The experimental data showed that the nano strain-amplifier can enhance the sensitivity of SiC strain sensors at least 5.4 times larger than that of the conventional structures. This result indicates the potential of the proposed strain-amplifier for ultra-sensitive mechanical sensing applications.

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Hoang-Phuong Phan, Toan Dinh, Takahiro Kozeki, Tuan-Khoa Nguyen, Afzaal Qamar, Takahiro Namazu, Nam-Trung Nguyen, Dzung Viet Dao. 2016-07-15. Nano strain-amplifier: making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects. https://doi.org/10.1063/1.4963258

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