arXiv subjects

Toan Dinh

Publications and source records attributed to Toan Dinh.

7 recordsLinked to original sources

arXiv2026

Facile hBN-hBN Interfacial Overlap Engineering for Enhanced Quantum Emitter Formation

Quantum emitters in two-dimensional materials, particularly hBN, are promising platforms for quantum technologies. However, achieving high-density emitters at predetermined locations while preserving optical quality remains challenging. Here, we introduce a facile, cost-effective double-layer all-dry transfer approach to deterministically create overlap regions between hBN flakes. These pre-defined capped regions exhibit a significantly enhanced emitter density, with up to a 15-fold increase compared to uncapped areas. Importantly, this method does not compromise emitter quality: emitters within overlap regions demonstrate excellent optical performance, including high signal-to-background and signal-to-noise ratios, large Debye-Waller factors, high brightness, and strong spectral stability. Possible defect configurations are also discussed to contextualize the observed emission characteristics. This scalable strategy enables preferential formation of quantum emitters in targeted regions, achieving higher densities than simple treatments such as plasma irradiation while avoiding the complexity of advanced fabrication techniques. The approach provides a practical pathway for integrating high-quality quantum emitters into scalable quantum photonic platforms.

cond-mat.mtrl-sci↗

arXiv2026

Nanoscale Fluorescence Thermometry: Probes, Recent Advances and Emerging Directions

The transition of materials and devices to nanometer, atomic, and quantum scales makes thermal characterization increasingly challenging, driving the need for advanced nanoscale thermometry. Fluorescence nanothermometry has emerged as a powerful approach, enabling remote, spatially resolved temperature measurements with sub-micrometer-to-nanometer precision across applications in nanoelectronics, microfluidics, and biological systems. In these systems, temperature is inferred from variations in fluorescence observables, including spectral position, intensity, linewidth, and excited-state dynamics. This review provides a comprehensive and critical overview of fluorescence nanothermometry, covering fundamental mechanisms, material platforms, recent advances, and emerging applications. It further presents a critical evaluation of key challenges and discusses emerging strategies and future research directions toward achieving robust, real-time thermometry. It is anticipated that this review will stimulate further advances in material platforms and system design, accelerating the development of accurate, scalable, and application-ready nanoscale thermometers.

physics.optics↗

arXiv2025

Laser-Induced Heating in Diamonds: Influence of Substrate Thermal Conductivity and Interfacial Polymer Layers

Diamonds hosting color centers possess intrinsically high thermal conductivity; therefore, laser-induced heating has often received little attention. However, when placed on substrates with low thermal conductivity, localized heating of diamonds under laser excitation can become significant, and the presence of an interfacial polymer layer between substrate and diamond further amplifies this effect. Yet, the relationship between substrate thermal conductivity, polymer thickness, and laser heating remains to be established. Here, a systematic investigation is presented on laser-induced heating of silicon-vacancy diamond on substrates with varying thermal conductivity and interfacial polymer thickness. Results reveal that even at a low excitation power of 737~$\mu$W/$\mu$m$^2$, thin amorphous holey carbon -- the lowest-conductivity substrate ($\sim$0.2~W~m$^{-1}$~K$^{-1}$) studied -- exhibits substantial heating, while glass ($\sim$1.4~W~m$^{-1}$~K$^{-1}$) and polydimethylsiloxane (PDMS, $\sim$0.35~W~m$^{-1}$~K$^{-1}$) show noticeable heating only above 2.95~mW/$\mu$m$^2$. For polymer interlayers, a thickness of just 2.2~$\mu$m induces significant heating at 2.95~mW/$\mu$m$^2$ and above, highlighting strong influence of both substrate and polymer thickness on local heating response. Experimental findings are further validated using COMSOL Multiphysics simulations with a steady-state 3D heat transfer model. These results provide practical guidance for substrate selection and sample preparation, enabling optimization of conditions for optical thermometry and quantum sensing applications.

cond-mat.mtrl-sci↗

arXiv2025

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

Solid-state quantum emitters, molecular-sized complexes releasing a single photon at a time, have garnered much attention owing to their use as a key building block in various quantum technologies. Among these, quantum emitters in hexagonal boron nitride (hBN) have emerged as front runners with superior attributes compared to other competing platforms. These attributes are attainable thanks to the robust, two-dimensional lattice of the material formed by the extremely strong B-N bonds. This review discusses the fundamental properties of quantum emitters in hBN and highlights recent progress in the field. The focus is on the fabrication and engineering of these quantum emitters facilitated by state-of-the-art equipment. Strategies to integrate the quantum emitters with dielectric and plasmonic cavities to enhance their optical properties are summarized. The latest developments in new classes of spin-active defects, their predicted structural configurations, and the proposed suitable quantum applications are examined. Despite the current challenges, quantum emitters in hBN have steadily become a promising platform for applications in quantum information science.

cond-mat.mtrl-sci↗

arXiv2018

Strain effect in highly-doped n-type 3C-SiC-on-glass substrate for mechanical sensors and mobility enhancement

This work reports the strain effect on the electrical properties of highly doped n-type single crystalline cubic silicon carbide (3C-SiC) transferred onto a 6-inch glass substrate employing an anodic bonding technique. The experimental data shows high gauge factors of -8.6 in longitudinal direction and 10.5 in transverse direction along the [100] orientation. The piezoresistive effect in the highly doped 3C-SiC film also exhibits an excellent linearity and consistent reproducibility after several bending cycles. The experimental result was in good agreement with the theoretical analysis based on the phenomenon of electron transfer between many valleys in the conduction band of n-type 3C-SiC. Our finding for the large gauge factor in n-type 3C- SiC coupled with the elimination of the current leak to the insulated substrate could pave the way for the development of single crystal SiC-on-glass based MEMS applications.

physics.app-ph↗

arXiv2017

Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification

Strain engineering has attracted great attention, particularly for epitaxial films grown on a different substrate. Residual strains of SiC have been widely employed to form ultra-high frequency and high Q factor resonators. However, to date the highest residual strain of SiC was reported to be limited to approximately 0.6%. Large strains induced into SiC could lead to several interesting physical phenomena, as well as significant improvement of resonant frequencies. We report an unprecedented nano strain-amplifier structure with an ultra-high residual strain up to 8% utilizing the natural residual stress between epitaxial 3C SiC and Si. In addition, the applied strain can be tuned by changing the dimensions of the amplifier structure. The possibility of introducing such a controllable and ultra-high strain will open the door to investigating the physics of SiC in large strain regimes, and the development of ultra sensitive mechanical sensors.

cond-mat.mtrl-sci↗

arXiv2016

Nano strain-amplifier: making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects

This paper presents an innovative nano strain-amplifier employed to significantly enhance the sensitivity of piezoresistive strain sensors. Inspired from the dogbone structure, the nano strain-amplifier consists of a nano thin frame released from the substrate, where nanowires were formed at the centre of the frame. Analytical and numerical results indicated that a nano strain-amplifier significantly increases the strain induced into a free standing nanowire, resulting in a large change in their electrical conductance. The proposed structure was demonstrated in p-type cubic silicon carbide nanowires fabricated using a top down process. The experimental data showed that the nano strain-amplifier can enhance the sensitivity of SiC strain sensors at least 5.4 times larger than that of the conventional structures. This result indicates the potential of the proposed strain-amplifier for ultra-sensitive mechanical sensing applications.

physics.ins-det↗