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arXiv · 1608.04264

Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2

David Lloyd·Xinghui Liu·Jason W. Christopher·Lauren Cantley·Anubhav Wadehra·Brian L. Kim·Bennett B. Goldberg·Anna K. Swan·J. Scott Bunch
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Abstract

We demonstrate the continuous and reversible tuning of the optical band gap of suspended monolayer MoS2 membranes by as much as 500 meV by applying very large biaxial strains. By using chemical vapor deposition (CVD) to grow crystals that are highly impermeable to gas, we are able to apply a pressure difference across suspended membranes to induce biaxial strains. We observe the effect of strain on the energy and intensity of the peaks in the photoluminescence (PL) spectrum, and find a linear tuning rate of the optical band gap of 99 meV/%. This method is then used to study the PL spectra of bilayer and trilayer devices under strain, and to find the shift rates and Gr\"uneisen parameters of two Raman modes in monolayer MoS2. Finally, we use this result to show that we can apply biaxial strains as large as 5.6% across micron sized areas, and report evidence for the strain tuning of higher level optical transitions.

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David Lloyd, Xinghui Liu, Jason W. Christopher, Lauren Cantley, Anubhav Wadehra, Brian L. Kim, Bennett B. Goldberg, Anna K. Swan, J. Scott Bunch. 2016-08-15. Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2. https://doi.org/10.1021/acs.nanolett.6b02615

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