arXiv · 1608.05250
Gain spectroscopy of a type-II VECSEL chip
Abstract
Using optical pump-white light probe spectroscopy the gain dynamics is investigated for a VECSEL chip which is based on a type-II heterostructure. The active region the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by experimental spectra. The results show a gain buildup on the type-II chip which is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from reduced electron-hole scattering.
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Christian Lammers, Markus Stein, Christian Berger, Christoph Möller, Christian Fuchs, Antje Ruiz Perez, Arash Rahimi-Iman, Jörg Hader, Jerome Moloney, Wolfgang Stolz, Stephan W. Koch, Martin Koch. 2016-08-18. Gain spectroscopy of a type-II VECSEL chip. https://doi.org/10.1063/1.4971333
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