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arXiv · 1608.08616

A nanofabricated, monolithic, path-separated electron interferometer

Akshay Agarwal·Chung-Soo Kim·Richard Hobbs·Dirk van Dyck·Karl K. Berggren
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Abstract

We report a self-aligned, monolithic electron interferometer, consisting of two 45 nm thick silicon layers separated by 20 $\mu$m. This interferometer was fabricated from a single crystal silicon cantilever on a transmission electron microscope grid by gallium focused ion-beam milling. Using this interferometer, we demonstrate beam path-separation, and obtain interference fringes in a Mach-Zehnder geometry, in an unmodified 200 kV transmission electron microscope. The fringes have a period of 0.32 nm, which corresponds to the $\left[\bar{1}\bar{1}1\right]$ lattice planes of silicon, and a maximum contrast of 15 %. This design can potentially be scaled to millimeter-scale, and used in electron holography. It can also be applied to perform fundamental physics experiments, such as interaction-free measurement with electrons.

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Akshay Agarwal, Chung-Soo Kim, Richard Hobbs, Dirk van Dyck, Karl K. Berggren. 2016-08-30. A nanofabricated, monolithic, path-separated electron interferometer. https://arxiv.org/abs/1608.08616

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