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arXiv · 1701.02791

Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification

Hoang-Phuong Phan·Tuan-Khoa Nguyen·Toan Dinh·Ina Ginosuke·Atieh Ranjbar Kermany·Afzaal Qamar·Jisheng Han·Takahiro Namazu·Maeda Ryutaro·Dzung Viet Dao·Nam-Trung Nguyen
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Abstract

Strain engineering has attracted great attention, particularly for epitaxial films grown on a different substrate. Residual strains of SiC have been widely employed to form ultra-high frequency and high Q factor resonators. However, to date the highest residual strain of SiC was reported to be limited to approximately 0.6%. Large strains induced into SiC could lead to several interesting physical phenomena, as well as significant improvement of resonant frequencies. We report an unprecedented nano strain-amplifier structure with an ultra-high residual strain up to 8% utilizing the natural residual stress between epitaxial 3C SiC and Si. In addition, the applied strain can be tuned by changing the dimensions of the amplifier structure. The possibility of introducing such a controllable and ultra-high strain will open the door to investigating the physics of SiC in large strain regimes, and the development of ultra sensitive mechanical sensors.

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Hoang-Phuong Phan, Tuan-Khoa Nguyen, Toan Dinh, Ina Ginosuke, Atieh Ranjbar Kermany, Afzaal Qamar, Jisheng Han, Takahiro Namazu, Maeda Ryutaro, Dzung Viet Dao, Nam-Trung Nguyen. 2017-01-05. Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification. https://doi.org/10.1063/1.4979834

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