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arXiv · 1708.05411

All-optical lithography process for contacting atomically-precise devices

Daniel R. Ward·Michael T. Marshall·DeAnna M. Campbell·Tzu-Ming Lu·Justin C. Koepke·David A. Scrymgeour·Ezra Bussmann·Shashank Misra
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Abstract

We describe an all-optical lithography process that can be used to make electrical contact to atomic-precision donor devices made in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.

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Daniel R. Ward, Michael T. Marshall, DeAnna M. Campbell, Tzu-Ming Lu, Justin C. Koepke, David A. Scrymgeour, Ezra Bussmann, Shashank Misra. 2017-08-08. All-optical lithography process for contacting atomically-precise devices. https://doi.org/10.1063/1.4998639

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