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arXiv · 1708.08600

Resonant Excitation of Quantum Emitters in Hexagonal Boron Nitride

Toan Trong Tran·Mehran Kianinia·Minh Nguyen·Sejeong Kim·Zai-Quan Xu·Alexander Kubanek·Milos Toth·Igor Aharonovich
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Abstract

Quantum emitters in layered hexagonal boron nitride (hBN) have recently attracted a great attention as promising single photon sources. In this work, we demonstrate resonant excitation of a single defect center in hBN, one of the most important prerequisites for employment of optical sources in quantum information application. We observe spectral linewidths of hBN emitter narrower than 1 GHz while the emitter experiences spectral diffusion. Temporal photoluminescence measurements reveals an average spectral diffusion time of around 100 ms. On-resonance photon antibunching measurement is also realized. Our results shed light on the potential use of quantum emitters from hBN in nanophotonics and quantum information.

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Toan Trong Tran, Mehran Kianinia, Minh Nguyen, Sejeong Kim, Zai-Quan Xu, Alexander Kubanek, Milos Toth, Igor Aharonovich. 2017-08-29. Resonant Excitation of Quantum Emitters in Hexagonal Boron Nitride. https://arxiv.org/abs/1708.08600

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