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Toan Trong Tran

Publications and source records attributed to Toan Trong Tran.

At least 19 recordsLinked to original sources

Facile hBN-hBN Interfacial Overlap Engineering for Enhanced Quantum Emitter Formation

Quantum emitters in two-dimensional materials, particularly hBN, are promising platforms for quantum technologies. However, achieving high-density emitters at predetermined locations while preserving optical quality remains challenging. Here, we introduce a facile, cost-effective double-layer all-dry transfer approach to deterministically create overlap regions between hBN flakes. These pre-defined capped regions exhibit a significantly enhanced emitter density, with up to a 15-fold increase compared to uncapped areas. Importantly, this method does not compromise emitter quality: emitters within overlap regions demonstrate excellent optical performance, including high signal-to-background and signal-to-noise ratios, large Debye-Waller factors, high brightness, and strong spectral stability. Possible defect configurations are also discussed to contextualize the observed emission characteristics. This scalable strategy enables preferential formation of quantum emitters in targeted regions, achieving higher densities than simple treatments such as plasma irradiation while avoiding the complexity of advanced fabrication techniques. The approach provides a practical pathway for integrating high-quality quantum emitters into scalable quantum photonic platforms.

cond-mat.mtrl-sci

Physics-Based versus Data-Driven Classification of Single-Photon Quantum Emitters from Sparse Autocorrelation Data

Identifying single photon emitters from large, inhomogeneous candidate populations is key to realizing many quantum applications. This requires measuring the emitters second order autocorrelation function, whose statistical reliability is fundamentally limited by acquisition time. Machine learning classifiers can accelerate identification from sparse data, but their performance relative to physics-based inference has not been systematically examined. Here, we introduce sequential Bayesian inference for single photon emitter classification and benchmark it against Levenberg-Marquardt fitting and a feedforward neural network. We use synthetic training and test data calibrated against real Hanbury Brown-Twiss measurements from hexagonal boron nitride emitters, enabling evaluation against an exactly known ground-truth emitter number under realistic noise and background conditions. All three approaches achieve high, near-perfect accuracy with sufficient integration time, but differ greatly in convergence rate and robustness under sparse photon statistics. The neural network is most robust at short integration times. The Bayesian classifier reaches near-perfect accuracy fastest, while retaining full physical interpretability. Levenberg-Marquardt fitting remains a valuable, fully interpretable method, achieving the highest recall despite being the slowest to converge. These results lead to several key conclusions. No single method dominates across all performance metrics. Relying on any one metric alone can give a misleading picture of classifier performance, particularly under sparse photon statistics. Physics-based and data-driven methods are complementary rather than competing approaches. Together, these findings provide practical guidance for selecting and combining classification strategies for scalable single-photon-source screening and other quantum-emitter characterization tasks.

quant-ph

Anderson Localization with Single Photons from a Quantum Emitter

Anderson localization of light is a fundamental emergent phenomenon in disordered systems. In arrays of coupled waveguides, it suppresses transport and causes photons to remain localized near the excitation site as coupling disorder increases. Here, we experimentally demonstrate Anderson localization using single photons emitted by a single-photon emitter in hexagonal boron nitride at room temperature. Despite the limited temporal coherence of the emitter, the photons undergo pronounced Anderson localization, evidenced by exponentially localized output intensity profiles in disordered waveguide lattices. Beyond the experimental demonstration, we develop a general theoretical framework for wave propagation in disordered tight-binding systems, showing that the configuration-averaged output intensity converges to a stationary spatial distribution at large propagation distances. In the case of off-diagonal disorder, this stationary profile is characterized by an effective localization length that exhibits a robust inverse-variance scaling with the disorder strength. These results establish defect-based room-temperature emitters as practical platforms for studying Anderson localization in integrated photonics and support their use in applications that exploit controlled disorder, including neuromorphic and quantum photonic architectures.

physics.optics

Nanoscale Fluorescence Thermometry: Probes, Recent Advances and Emerging Directions

The transition of materials and devices to nanometer, atomic, and quantum scales makes thermal characterization increasingly challenging, driving the need for advanced nanoscale thermometry. Fluorescence nanothermometry has emerged as a powerful approach, enabling remote, spatially resolved temperature measurements with sub-micrometer-to-nanometer precision across applications in nanoelectronics, microfluidics, and biological systems. In these systems, temperature is inferred from variations in fluorescence observables, including spectral position, intensity, linewidth, and excited-state dynamics. This review provides a comprehensive and critical overview of fluorescence nanothermometry, covering fundamental mechanisms, material platforms, recent advances, and emerging applications. It further presents a critical evaluation of key challenges and discusses emerging strategies and future research directions toward achieving robust, real-time thermometry. It is anticipated that this review will stimulate further advances in material platforms and system design, accelerating the development of accurate, scalable, and application-ready nanoscale thermometers.

physics.optics

Machine Learning Based Optical Thermometry Using Photoluminescence and Raman Spectra of Diamonds Containing SiV Centers

Micro- and nanothermometry enable precise temperature monitoring and control at the micro- and nanoscale, and have become essential diagnostic tools in applications ranging from high-power microelectronics to biosensing and nanomedicine. Most existing techniques rely on secondary micro- and nanothermometers that require individual calibration of each sensor, ideally both off- and in-situ, before use. We present an alternative approach that overcomes this limitation by employing fluorescent diamonds containing silicon-vacancy centers, where the thermo-sensitive physical quantities are the centers' photoluminescence and the diamond host's Raman signals. The photoluminescence and Raman data are analyzed using two multi-feature regression algorithms that leverage a minimal number of calibration diamonds and temperature set points to predict the temperature of previously unseen diamonds. Using this approach, the models achieve accuracies as low as 0.7 K, resolutions down to 0.6 K Hz$^{-1/2}$, and sensitivity as high as 0.04 K$^{-1}$. These correspond to improvements of roughly 70 percent (over threefold) in accuracy, 50 percent (twofold) in resolution, and 567 percent (sevenfold) in sensitivity compared with traditional single-feature models. Our approach is particularly suited to applications where pre-deployment calibration of every thermosensor is impractical, and it is generalizable to any thermometry platform with two or more simultaneously measurable temperature-dependent observables.

cond-mat.mtrl-sci

Laser-Induced Heating in Diamonds: Influence of Substrate Thermal Conductivity and Interfacial Polymer Layers

Diamonds hosting color centers possess intrinsically high thermal conductivity; therefore, laser-induced heating has often received little attention. However, when placed on substrates with low thermal conductivity, localized heating of diamonds under laser excitation can become significant, and the presence of an interfacial polymer layer between substrate and diamond further amplifies this effect. Yet, the relationship between substrate thermal conductivity, polymer thickness, and laser heating remains to be established. Here, a systematic investigation is presented on laser-induced heating of silicon-vacancy diamond on substrates with varying thermal conductivity and interfacial polymer thickness. Results reveal that even at a low excitation power of 737~$μ$W/$μ$m$^2$, thin amorphous holey carbon -- the lowest-conductivity substrate ($\sim$0.2~W~m$^{-1}$~K$^{-1}$) studied -- exhibits substantial heating, while glass ($\sim$1.4~W~m$^{-1}$~K$^{-1}$) and polydimethylsiloxane (PDMS, $\sim$0.35~W~m$^{-1}$~K$^{-1}$) show noticeable heating only above 2.95~mW/$μ$m$^2$. For polymer interlayers, a thickness of just 2.2~$μ$m induces significant heating at 2.95~mW/$μ$m$^2$ and above, highlighting strong influence of both substrate and polymer thickness on local heating response. Experimental findings are further validated using COMSOL Multiphysics simulations with a steady-state 3D heat transfer model. These results provide practical guidance for substrate selection and sample preparation, enabling optimization of conditions for optical thermometry and quantum sensing applications.

cond-mat.mtrl-sci

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

Solid-state quantum emitters, molecular-sized complexes releasing a single photon at a time, have garnered much attention owing to their use as a key building block in various quantum technologies. Among these, quantum emitters in hexagonal boron nitride (hBN) have emerged as front runners with superior attributes compared to other competing platforms. These attributes are attainable thanks to the robust, two-dimensional lattice of the material formed by the extremely strong B-N bonds. This review discusses the fundamental properties of quantum emitters in hBN and highlights recent progress in the field. The focus is on the fabrication and engineering of these quantum emitters facilitated by state-of-the-art equipment. Strategies to integrate the quantum emitters with dielectric and plasmonic cavities to enhance their optical properties are summarized. The latest developments in new classes of spin-active defects, their predicted structural configurations, and the proposed suitable quantum applications are examined. Despite the current challenges, quantum emitters in hBN have steadily become a promising platform for applications in quantum information science.

cond-mat.mtrl-sci

Fiber-based Ratiometric Optical Thermometry with Silicon-Vacancy in Microdiamonds

Fiber optic all-optical thermometry is a promising technology to track temperature at a micro-scale while designing efficient and reliable microelectronic devices and components. In this work, we demonstrate a novel real-time ratiometric fiber optic thermometry technique based on silicon-vacancy (SiV) diamond that shows the highest temperature resolution (22.91 KHz^(-1/2) Wcm^(-2)) and spatial resolution (~7.5 um) among all-optical fiber-based thermosensors reported to date. Instead of analyzing the spectral features of temperature-dependent SiV signal, coming from SiV micro-diamond fixed on the fiber tip, an alternative parallel detection method based on filtering optics and photon counters is proposed to read out the sample temperature in real-time. The signal collection efficiency of the fiber is also investigated numerically with semi-analytic ray-optical analysis and then compared with our experimental study. We finally demonstrate the performance of the thermosensor by monitoring the temperature at distinct locations in a lab-built graphite-based microheater device. Our work introduces a reconfigurable method for temperature monitoring in microelectronic, microfluidic devices, or biological environments and unlocks a new direction for fiber-based all-optical thermometry research.

physics.optics

Cryogenic Thermal Shock Effects on Optical Properties of Quantum Emitters in Hexagonal Boron Nitride

Solid-state quantum emitters are vital building blocks for quantum information science and quantum technology. Among various types of solid-state emitters discovered to date, color centers in hexagonal boron nitride have garnered tremendous traction in recent years thanks to their environmental robustness, high brightness and room-temperature operation. Most recently, these quantum emitters have been employed for satellite-based quantum key distribution. One of the most important requirements to qualify these emitters for space-based applications is their optical stability against cryogenic thermal shock. Such understanding has, however, remained elusive to date. Here, we report on the effects caused by such thermal shock which induces random, irreversible changes in the spectral characteristics of the quantum emitters. By employing a combination of structural characterizations and density functional calculations, we attribute the observed changes to lattice strains caused by the cryogenic temperature shock. Our study shed light on the stability of the quantum emitters under extreme conditions, similar to those countered in outer space.

physics.app-ph

Ultralow-power cryogenic thermometry based on optical-transition broadening of a two-level system in diamond

Cryogenic temperatures are the prerequisite for many advanced scientific applications and technologies. The accurate determination of temperature in this range and at the submicrometer scale is, however, nontrivial. This is due to the fact that temperature reading in cryogenic conditions can be inaccurate due to optically induced heating. Here, we present an ultralow power, optical thermometry technique that operates at cryogenic temperatures. The technique exploits the temperature dependent linewidth broadening measured by resonant photoluminescence of a two level system, a germanium vacancy color center in a nanodiamond host. The proposed technique achieves a relative sensitivity of 20% 1/K, at 5 K. This is higher than any other all optical nanothermometry method. Additionally, it achieves such sensitivities while employing excitation powers of just a few tens of nanowatts, several orders of magnitude lower than other traditional optical thermometry protocols. To showcase the performance of the method, we demonstrate its ability to accurately read out local differences in temperatures at various target locations of a custom-made microcircuit. Our work is a definite step towards the advancement of nanoscale optical thermometry at cryogenic temperatures.

physics.optics

Real-time ratiometric optical nanoscale thermometry

All optical nanothermometry has become a powerful, noninvasive tool for measuring nanoscale temperatures in applications ranging from medicine to nanooptics and solid-state nanodevices. The key features of any candidate nanothermometer are sensitivity and resolution. Here, we demonstrate a real time, diamond based nanothermometry technique with sensitivity and resolution much larger than those of any existing all optical method. The distinct performance of our approach stems from two factors. First, temperature sensors nanodiamonds cohosting two Group IV colour centers engineered to emit spectrally separated Stokes and AntiStokes fluorescence signals under excitation by a single laser source. Second, a parallel detection scheme based on filtering optics and high sensitivity photon counters for fast readout. We demonstrate the performance of our method by monitoring temporal changes in the local temperature of a microcircuit and a MoTe2 field effect transistor. Our work lays the foundation for time resolved temperature monitoring and mapping of micro, nanoscale devices such as microfluidic channels, nanophotonic circuits, and nanoelectronic devices, as well as complex biological environments such as tissues and cells.

physics.optics

Bright and photostable single-photon emitter in silicon carbide

Single-photon sources are of paramount importance in quantum communication, quantum computation, and quantum metrology. In particular, there is great interest in realizing scalable solid-state platforms that can emit triggered photons on demand to achieve scalable nanophotonic networks. We report on a visible-spectrum single-photon emitter in 4H silicon carbide (SiC). The emitter is photostable at room and low temperatures, enabling photon counts per second in excess of 2$\times$10$^6$ from unpatterned bulk SiC. It exists in two orthogonally polarized states, which have parallel absorption and emission dipole orientations. Low-temperature measurements reveal a narrow zero phonon line (linewidth $<0.1~$nm) that accounts for $>30$% of the total photoluminescence spectrum.

quant-ph

Bottom-Up Synthesis of Hexagonal Boron Nitride Nanoparticles with Intensity-Stabilized Quantum Emitters

Fluorescent nanoparticles are widely utilized in a large range of nanoscale imaging and sensing applications. While ultra-small nanoparticles (size <10 nm) are highly desirable, at this size range their photostability can be compromised due to effects such as intensity fluctuation and spectral diffusion caused by interaction with surface states. In this letter, we demonstrate a facile, bottom-up technique for the fabrication of sub-10-nm hBN nanoparticles hosting photostable bright emitters via a catalyst-free hydrothermal reaction between boric acid and melamine. We also implement a simple stabilization protocol that significantly reduces intensity fluctuation by ~85% and narrows the emission linewidth by ~14% by employing a common sol-gel silica coating process. Our study advances a promising strategy for the scalable, bottom-up synthesis of high-quality quantum emitters in hBN nanoparticles.

physics.optics

Optical Thermometry with Quantum Emitters in Hexagonal Boron Nitride

Nanoscale optical thermometry is a promising non-contact route for measuring local temperature with both high sensitivity and spatial resolution. In this work, we present a deterministic optical thermometry technique based on quantum emitters in nanoscale hexagonal boron-nitride. We show that these nanothermometers exhibit better performance than that of homologous, all-optical nanothermometers both in sensitivity and range of working temperature. We demonstrate their effectiveness as nanothermometers by monitoring the local temperature at specific locations in a variety of custom-built micro-circuits. This work opens new avenues for nanoscale temperature measurements and heat flow studies in miniaturized, integrated devices.

physics.app-ph

Quantum Random Number Generation using a Solid-State Single-Photon Source

Quantum random number generation (QRNG) harnesses the intrinsic randomness of quantum mechanical phenomena. Demonstrations of such processes have, however, been limited to probabilistic sources, for instance, spontaneous parametric down-conversion or faint lasers, which cannot be triggered deterministically. Here, we demonstrate QRNG with a quantum emitter in hexagonal boron nitride; an emerging solid-state quantum source that can generate single photons on demand and operates at room temperature. We achieve true random number generation through the measurement of single photons exiting one of four integrated photonic waveguides, and subsequently, verify the randomness of the sequences in accordance with the National Institute of Standards and Technology benchmark suite. Our results open a new avenue to the fabrication of on-chip deterministic random number generators and other solid-state-based quantum-optical devices.

physics.optics

Strain Engineering of Quantum Emitters in Hexagonal Boron Nitride

Quantum emitters in hexagonal boron nitride (hBN) are promising building blocks for the realization of integrated quantum photonic systems. However, their spectral inhomogeneity currently limits their potential applications. Here, we apply tensile strain to quantum emitters embedded in few-layer hBN films and realize both red and blue spectral shifts with tuning magnitudes up to 65 meV, a record for any two-dimensional quantum source. We demonstrate reversible tuning of the emission and related photophysical properties. We also observe rotation of the optical dipole in response to strain, suggesting the presence of a second excited state. We derive a theoretical model to describe strain-based tuning in hBN, and the rotation of the optical dipole. Our work demonstrates the immense potential for strain tuning of quantum emitters in layered materials to enable their employment in scalable quantum photonic networks.

cond-mat.mtrl-sci

Selective Defect Formation in Hexagonal Boron Nitride

Luminescent defect-centers in hexagonal boron nitride (hBN) have emerged as a promising 2D-source of single photon emitters (SPEs) due to their high brightness and robust operation at room temperature. The ability to create such emitters with well-defined optical properties is a cornerstone towards their integration into on-chip photonic architectures. Here, we report an effective approach to fabricate hBN single photon emitters (SPEs) with desired emission properties in two isolated spectral regions via the manipulation of boron diffusion through copper during atmospheric pressure chemical vapor deposition (APCVD)--a process we term gettering. Using the gettering technique we deterministically place the resulting zero-phonon line (ZPL) between the regions 550-600 nm or from 600-650 nm, paving the way for hBN SPEs with tailored emission properties across a broad spectral range. Our ability to control defect formation during hBN growth provides a simple and cost-effective means to improve the crystallinity of CVD hBN films, and lower defect density making it applicable to hBN growth for a wide range of applications. Our results are important to understand defect formation of quantum emitters in hBN and deploy them for scalable photonic technologies.

physics.app-ph

Suppression of Spectral Diffusion by Anti-Stokes Excitation of Quantum Emitters in Hexagonal Boron Nitride

Solid-state quantum emitters are garnering a lot of attention due to their role in scalable quantum photonics. A notable majority of these emitters, however, exhibit spectral diffusion due to local, fluctuating electromagnetic fields. In this work, we demonstrate efficient Anti-Stokes (AS) excitation of quantum emitters in hexagonal boron nitride (hBN), and show that the process results in the suppression of a specific mechanism responsible for spectral diffusion of the emitters. We also demonstrate an all-optical gating scheme that exploits Stokes and Anti-Stokes excitation to manipulate spectral diffusion so as to switch and lock the emission energy of the photon source. In this scheme, reversible spectral jumps are deliberately enabled by pumping the emitter with high energy (Stokes) excitation; AS excitation is then used to lock the system into a fixed state characterized by a fixed emission energy. Our results provide important insights into the photophysical properties of quantum emitters in hBN, and introduce a new strategy for controlling the emission wavelength of quantum emitters.

physics.optics