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arXiv · 1710.00632

High frequency optomechanical disk resonators in III-V ternary semiconductors

Biswarup Guha·Silvia Mariani·Aristide Lemaître·Sylvain Combrié·Giuseppe Leo·Ivan Favero
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Abstract

Optomechanical systems based on nanophotonics are advancing the field of precision motion measurement, quantum control and nanomechanical sensing. In this context III-V semiconductors offer original assets like the heteroepitaxial growth of optimized metamaterials for photon/phonon interactions. GaAs has already demonstrated high performances in optomechanics but suffers from two photon absorption (TPA) at the telecom wavelength, which can limit the cooperativity. Here, we investigate TPA-free III-V semiconductor materials for optomechanics applications: GaAs lattice-matched In0:5Ga0:5P and Al0:4Ga0:6As. We report on the fabrication and optical characterization of high frequency (500-700 MHz) optomechanical disks made out of these two materials, demonstrating high optical and mechanical Q in ambient conditions. Finally we achieve operating these new devices as laser-sustained optomechanical self-oscillators, and draw a first comparative study with existing GaAs systems.

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Biswarup Guha, Silvia Mariani, Aristide Lemaître, Sylvain Combrié, Giuseppe Leo, Ivan Favero. 2017-10-02. High frequency optomechanical disk resonators in III-V ternary semiconductors. https://doi.org/10.1364/oe.25.024639

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