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arXiv · 1712.03859

Finite Size Effects in Highly Scaled Ruthenium Interconnects

Shibesh Dutta·Kristof Moors·Michiel Vandemaele·Christoph Adelmann
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Abstract

Ru has been considered a candidate to replace Cu-based interconnects in VLSI circuits. Here, a methodology is proposed to predict the resistivity of (Ru) interconnects. First, the dependence of the Ru thin film resistivity on the film thickness is modeled by the semiclassical Mayadas-Shatzkes (MS) approach. The fitting parameters thus obtained are then used as input in a modified MS model for nanowires to calculate wire resistivities. Predicted experimental resistivities agreed within about 10%. The results further indicate that grain boundary scattering was the dominant scattering mechanism in scaled Ru interconnects.

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Shibesh Dutta, Kristof Moors, Michiel Vandemaele, Christoph Adelmann. 2018-01-09. Finite Size Effects in Highly Scaled Ruthenium Interconnects. https://doi.org/10.1109/led.2017.2788889

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