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arXiv · 1801.01052

Monolithic quantum-dot distributed feedback laser array on silicon

Yi Wang·Siming Chen·Ying Yu·Lidan Zhou·Lin Liu·Chunchuan Yang·Mengya Liao·Mingchu Tang·Zizhuo Liu·Jiang Wu·Wei Li·Ian Ross·Alwyn J. Seeds·Huiyun Liu·Siyuan Yu
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Abstract

Electrically-pumped lasers directly grown on silicon are key devices interfacing silicon microelectronics and photonics. We report here, for the first time, an electrically-pumped, room-temperature, continuous-wave (CW) and single-mode distributed feedback (DFB) laser array fabricated in InAs/GaAs quantum-dot (QD) gain material epitaxially grown on silicon. CW threshold currents as low as 12 mA and single-mode side mode suppression ratios (SMSRs) as high as 50 dB have been achieved from individual devices in the array. The laser array, compatible with state-of-the-art coarse wavelength division multiplexing (CWDM) systems, has a well-aligned channel spacing of 20 0.2 nm and exhibits a record wavelength coverage range of 100 nm, the full span of the O-band. These results indicate that, for the first time, the performance of lasers epitaxially grown on silicon is elevated to a point approaching real-world CWDM applications, demonstrating the great potential of this technology.

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Yi Wang, Siming Chen, Ying Yu, Lidan Zhou, Lin Liu, Chunchuan Yang, Mengya Liao, Mingchu Tang, Zizhuo Liu, Jiang Wu, Wei Li, Ian Ross, Alwyn J. Seeds, Huiyun Liu, Siyuan Yu. 2018-01-03. Monolithic quantum-dot distributed feedback laser array on silicon. https://doi.org/10.1364/optica.5.000528

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