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arXiv · 1803.07227

On the Interfacial Phase Growth and Vacancy Evolution during Accelerated Electromigration in Cu/Sn/Cu Microjoints

Vahid Attari·Supriyo Ghosh·Thien Duong·Raymundo Arroyave
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Abstract

In this work, we integrate different computational tools based on multi-phase-field simulations to account for the evolution of morphologies and crystallographic defects of Cu/Sn/Cu sandwich interconnect structures that are widely used in three dimensional integrated circuits (3DICs). Specifically, this work accounts for diffusion-driven formation and disappearance of multiple intermetallic phases during accelerated electromigration and takes into account the non-equilibrium formation of vacancies due to electromigration. The work compares nucleation, growth, and coalescence of intermetallic layers during transient liquid phase bonding and virtual joint structure evolution subjected to accelerated electromigration conditions at different temperatures. The changes in the rate of dissolution of Cu from intermetallics and the differences in the evolution of intermetallic layers depending on whether they act as cathodes or anodes are accounted for and are compared favorably with experiments. The model considers non-equilibrium evolution of vacancies that form due to differences in couplings between diffusing atoms and electron flows. This work is significant as the point defect evolution in 3DIC solder joints during electromigration has deep implications to the formation and coalescence of voids that ultimately compromise the structural and functional integrity of the joints.

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Vahid Attari, Supriyo Ghosh, Thien Duong, Raymundo Arroyave. 2018-03-20. On the Interfacial Phase Growth and Vacancy Evolution during Accelerated Electromigration in Cu/Sn/Cu Microjoints. https://doi.org/10.1016/j.actamat.2018.08.049

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