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arXiv · 1804.02358

A universal description of III-V/Si epitaxial growth processes

I. Lucci·S. Charbonnier·L. Pedesseau·M. Vallet·L. Cerutti·J. -B. Rodriguez·E. Tournie·R. Bernard·A. Letoublon·N. Bertru·A. Le Corre·S. Rennesson·F. Semond·G. Patriarche·L. Largeau·P. Turban·A. Ponchet·C. Cornet
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Abstract

Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si systems. Surface/interface contributions to the free energy variations are found to be prominent over strain relief processes. We finally propose a general and unified description of III-V/Si growth processes, including the description of antiphase boundaries formation.

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I. Lucci, S. Charbonnier, L. Pedesseau, M. Vallet, L. Cerutti, J. -B. Rodriguez, E. Tournie, R. Bernard, A. Letoublon, N. Bertru, A. Le Corre, S. Rennesson, F. Semond, G. Patriarche, L. Largeau, P. Turban, A. Ponchet, C. Cornet. 2018-04-06. A universal description of III-V/Si epitaxial growth processes. https://doi.org/10.1103/physrevmaterials.2.060401

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