Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure

Debora Pierucci; Jihene Zribi; Hugo Henck; Julien Chaste; Mathieu G. Silly; François Bertran; Patrick Le Fevre; Bernard Gil; Alex Summerfield; Peter H. Beton; Sergei V. Novikov; Guillaume Cassabois; Julien E. Rault; Abdelkarim Ouerghi

doi:10.1063/1.5029220

arXiv · 1806.07105

Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure

Debora Pierucci·Jihene Zribi·Hugo Henck·Julien Chaste·Mathieu G. Silly·François Bertran·Patrick Le Fevre·Bernard Gil·Alex Summerfield·Peter H. Beton·Sergei V. Novikov·Guillaume Cassabois·Julien E. Rault·Abdelkarim Ouerghi

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Abstract

We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurement, reflecting the high quality of the h-BN films. The measured valence band maximum (VBM) located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap ~ 6 eV). These results demonstrate that, although only weak van der Waals interactions are present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN.

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Debora Pierucci, Jihene Zribi, Hugo Henck, Julien Chaste, Mathieu G. Silly, François Bertran, Patrick Le Fevre, Bernard Gil, Alex Summerfield, Peter H. Beton, Sergei V. Novikov, Guillaume Cassabois, Julien E. Rault, Abdelkarim Ouerghi. 2018-06-19. Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure. https://doi.org/10.1063/1.5029220

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