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arXiv · 1809.00113

Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport

Qin Zhou·Honglei Wu·Hui Li·Xi Tang·Zuoyan Qin·Dan Dong·Yan Lin·Chengjin Lu·Ran Qiu·Ruisheng Zheng·Jiannong Wang·Baikui Li
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Abstract

An aluminum nitride (AlN) Schottky barrier diode (SBD) was fabricated on a nonpolar AlN crystal grown on tungsten substrate by physical vapor transport. The Ni/Au-AlN SBD features a low ideality factor n of 3.3 and an effective Schottky barrier height (SBH) of 1.05 eV at room temperature. The ideality factor n decreases and the effective SBH increases at high temperatures. The temperature dependences of n and SBH were explained using an inhomogeneous model. A mean SBH of 2.105 eV was obtained for the Ni-AlN Schottky junction from the inhomogeneity analysis of the current-voltage characteristics. An equation in which the parameters have explicit physical meanings in thermionic emission theory is proposed to describe the current-voltage characteristics of inhomogeneous SBDs.

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Qin Zhou, Honglei Wu, Hui Li, Xi Tang, Zuoyan Qin, Dan Dong, Yan Lin, Chengjin Lu, Ran Qiu, Ruisheng Zheng, Jiannong Wang, Baikui Li. 2018-09-01. Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport. https://doi.org/10.1109/jeds.2019.2923204

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