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arXiv · 1903.00489

Quantum-Hall to Insulator Transition in Ultra-low-carrier-density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level

Maryam Salehi·Hassan Shapourian·Ilan Thomas Rosen·Myung-Geun Han·Jisoo Moon·Pavel Shibayev·Deepti Jain·David Goldhaber-Gordon·Seongshik Oh
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Abstract

A key feature of the topological surface state under a magnetic field is the presence of the zeroth Landau level at the zero energy. Nonetheless, it has been challenging to probe the zeroth Landau level due to large electron-hole puddles smearing its energy landscape. Here, by developing ultra-low-carrier density topological insulator Sb$_2$Te$_3$ films, we were able to reach an extreme quantum limit of the topological surface state and uncover a hidden phase at the zeroth Landau level. First, we discovered an unexpected quantum-Hall-to-insulator-transition near the zeroth Landau level. Then, through a detailed scaling analysis, we found that this quantum-Hall-to-insulator-transition belongs to a new universality class, implying that the insulating phase discovered here has a fundamentally different origin from those in non-topological systems.

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Maryam Salehi, Hassan Shapourian, Ilan Thomas Rosen, Myung-Geun Han, Jisoo Moon, Pavel Shibayev, Deepti Jain, David Goldhaber-Gordon, Seongshik Oh. 2019-03-01. Quantum-Hall to Insulator Transition in Ultra-low-carrier-density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level. https://doi.org/10.1002/adma.201901091

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