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arXiv · 1906.01257

Magnetoresistance in Metallic Ferroelectrics

Jiesu Wang·Hongbao Yao·Kuijuan Jin·Er-Jia Guo·Qinghua Zhang·Chao Ma·Lin Gu·Pazhanivelu Venkatachalam·Jiali Zhao·Jiaou Wang·Hassen Riahi·Haizhong Guo·Chen Ge·Can Wang·Guozhen Yang
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Abstract

Polar metals with ferroelectric-like displacements in metals have been achieved recently, half century later than Anderson and Blount's prediction. However, the genuine ferroelectricity with electrical dipolar switching has not yet been attained experimentally in the conducting materials, especially the ones possessing magnetic responses. Here we report the coexistence of ferroelectricity and magnetoresistance (MR) in the metallic PbNb0.12Ti0.88O3 (PNTO) thin films. We found that the conducting and magnetic responses of PNTO films are highly asymmetric. Negative MR up to 50% is observed under an in-plane magnetic field; the MR switches to positive with the magnetic field applied parallel to the surface normal. Such unique behavior is attributed to the moving electron caused effective magnetic field which couples with the spins of electrons, which form a dynamic multiferroic state in the metallic PNTO. These findings break a path to multiferroic metal and offer a great potential to the multi-functional devices.

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Jiesu Wang, Hongbao Yao, Kuijuan Jin, Er-Jia Guo, Qinghua Zhang, Chao Ma, Lin Gu, Pazhanivelu Venkatachalam, Jiali Zhao, Jiaou Wang, Hassen Riahi, Haizhong Guo, Chen Ge, Can Wang, Guozhen Yang. 2019-06-04. Magnetoresistance in Metallic Ferroelectrics. https://arxiv.org/abs/1906.01257

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