arXiv subjects

Haizhong Guo

Publications and source records attributed to Haizhong Guo.

At least 19 recordsLinked to original sources

arXiv2026

Suppression of the tendency toward antiferromagnetic order in the Dirac semimetal SrIrO$_3$

The entangled charge and spin dynamics in strongly electron correlated system has been a fruitful playground for exploring new physical phenomena. Here with resonant inelastic X-ray scattering we studied the spin dynamics of SrIrO$_3$, a half-filled paramagnetic semimetal hosting highly itinerant Dirac Fermions due to its topological band structure. Our results show that its magnetic excitations share much similarity to the ordered compounds upon Sn substitution in exchange strength and AFM instability, while the system maintains spin non-ordered. Further, the non-ordered pristine SrIrO$_3$ hosts even longer lifetime magnetic excitations near the AFM zone center comparing to the Sn substituted ordered compounds, contrary to general expectation. These observations indicate an interesting connection between band topology and electron correlation in SrIrO$_3$.

cond-mat.str-el↗

arXiv2026

Voltage-controlled topological spin textures in the monolayer limit

The physics of phase transitions in low-dimensional systems has long been a subject of significant research interest. Long-range magnetic order in the strict two-dimensional limit, whose discovery circumvented the Mermin-Wagner theorem, has rapidly emerged as a research focus. However, the demonstration of a non-trivial topological spin textures in two-dimensional limit has remained elusive. Here, we demonstrate the out-of-plane electric field breaks inversion symmetry while simultaneously modulating the electronic band structure, enabling electrically tunable spin-orbit interaction for creation and manipulation of topological spin textures in monolayer CrI3. The realization of ideal two-dimensional topological spin textures may offer not only an experimental testbed for probing the Berezinskii-Kosterlitz-Thouless mechanism, but also potential insights into unresolved quantum phenomena including superconductivity and superfluidity. Moreover, voltage-controlled spin-orbit interaction offers a novel pathway to engineer two-dimensional spin textures with tailored symmetries and topologies, while opening avenues for skyrmion-based next-generation information technologies.

cond-mat.mes-hall↗

arXiv2025

High Pressure Superconducting transition in Dihydride BiH$_2$ with Bismuth Open-Channel Framework

Metal hydrides MHx with low hydrogen content are not expected to show high-Tc superconductivity owing to the low hydrogen-derived electronic density of states at Fermi level and the limited hydrogen contribution to electron-phonon coupling strength. In this work, we report on the successful synthesis of a novel bismuth dihydride superconductor, Cmcm-BiH$_2$, at approximately 150 GPa, and the discovery of superconductivity with Tc about 62 K at 163 GPa, marking the first instance of superconductor among the MH$_2$-type metal dihydrides. Cmcm-BiH$_2$ adopts a unique host-guest type structure, in which the Bi atoms via weak Bi-Bi covalent bonds form a three-dimensional open-channel framework that encapsulates H$_2$-like molecules as guests, thereby broadening the structural diversity of hydrides under high pressures. The occurrence of superconductivity is evidenced by a sharp drop of resistivity to zero and the characteristic downward shift of Tc under applied magnetic fields. Notably, Cmcm-BiH$_2$ remains stable down to at least 97 GPa during decompression, with the calculated lowest pressure for dynamic stability of 10 GPa. In-depth analysis reveals that the covalent bismuth open-channel structure forms metallic conduction channels, dominates the electronic states near the Fermi level, and contributes approximately 51% of the total $lambda$ in Cmcm-BiH$_2$, distinguishing it from known high-pressure hydride superconductors. These findings highlight the critical role of non-hydrogen elements in producing superconductivity and open new avenues for the design and optimization of high-Tc hydride superconductors.

cond-mat.supr-con↗

arXiv2023

Pressure-induced superconductivity in polycrystalline La3Ni2O7

We synthesized polycrystalline La3Ni2O7 samples by using the sol-gel method without post-annealing under high oxygen pressure, and then measured temperature-dependent resistivity under various hydrostatic pressures up to 14.5 GPa in a cubic anvil cell apparatus. We find that the density-wave-like anomaly in resistivity is progressively suppressed with increasing pressure and the resistivity drop corresponding to the onset of superconductivity emerges at pressure as low as 7 GPa. Zero resistivity is achieved at 9 GPa below 6.6 K, which increases quickly with pressure to 35.6 K at 14.5 GPa. The observation of zero-resistance state in the polycrystalline La3Ni2O7 samples under high pressures not only corroborates the recent report of superconductivity in the pressurized La3Ni2O7 crystals but also facilitates further studies on this emerging family of nickelate high-Tc superconductors.

cond-mat.supr-con↗

arXiv2023

Miniature Magnetic Nano islands in a Morphotropic Cobaltite Matrix

High-density magnetic memories are key components in spintronics, quantum computing, and energy-efficient electronics. Reduced dimensionality and magnetic domain stability at the nanoscale are essential for the miniaturization of magnetic storage units. Yet, inducing magnetic order, and selectively tuning spin-orbital coupling at specific locations have remained challenging. Here we demonstrate the construction of switchable magnetic nano-islands in a nonmagnetic matrix based on cobaltite homo-structures. The magnetic and electronic states are laterally modified by epitaxial strain, which is regionally controlled by freestanding membranes. Atomically sharp grain boundaries isolate the crosstalk between magnetically distinct regions. The minimal size of magnetic nano-islands reaches 35 nm in diameter, enabling an areal density of 400 Gbit per inch square. Besides providing an ideal platform for precisely controlled read and write schemes, this methodology can enable scalable and patterned memories on silicon and flexible substrates for various applications.

cond-mat.mtrl-sci↗

arXiv2022

Exploration of growth conditions of TaAs Weyl semimetal thin film by pulsed laser deposition

TaAs, the first experimentally discovered Weyl semimetal material, has attracted a lot of attention due to its high carrier mobility, high anisotropy, nonmagnetic and strong interaction with light. These make it an ideal candidate for the study of Weyl fermions and the applications in quantum computation, thermoelectric devices, and photodetection. For further basic physics studies and potential applications, large-size and high-quality TaAs films are urgently needed. However, it is difficult to grow As-stoichiometry TaAs films due to the volatilization of As during the growth. To solve this problem, the TaAs films were attempted to grow on different substrates using targets with different As stoichiometric ratios by pulsed laser deposition (PLD). In this work, we have found that partial As ions of the GaAs substrate are likely to diffuse into the TaAs films during growth, which was preliminarily confirmed by the structural characterization, surface topography and composition analysis. As a result, the As content in the TaAs film is improved and the TaAs phase is achieved. Our work presents an effective method to fabricate the TaAs films by PLD, providing the possible use of the Weyl semimetal film for functional devices.

cond-mat.mtrl-sci↗

arXiv2022

Emergent magnetic states and tunable exchange bias at all 3d nitride heterointerfaces

Interfacial magnetism stimulates the discovery of giant magnetoresistance and spin-orbital coupling across the heterointerfaces, facilitating the intimate correlation between spin transport and complex magnetic structures. Over decades, functional heterointerfaces composed of nitrides are seldomly explored due to the difficulty in synthesizing high-quality and correct composition nitride films. Here we report the fabrication of single-crystalline ferromagnetic Fe3N thin films with precisely controlled thickness. As film thickness decreasing, the magnetization deteriorates dramatically, and electronic state transits from metallic to insulating. Strikingly, the high-temperature ferromagnetism maintains in a Fe3N layer with a thickness down to 2 u. c. (~ 8 Å). The magnetoresistance exhibits a strong in-plane anisotropy and meanwhile the anomalous Hall resistance reserves its sign when Fe3N layer thickness exceeds 5 u. c. Furthermore, we observe a sizable exchange bias at the interfaces between a ferromagnetic Fe3N and an antiferromagnetic CrN. The exchange bias field and saturation moment strongly depend on the controllable bending curvature using cylinder diameter engineering (CDE) technique, implying the tunable magnetic states under lattice deformation. This work provides a guideline for exploring functional nitride films and applying their interfacial phenomena for innovative perspectives towards the practical applications.

cond-mat.mtrl-sci↗

arXiv2022

Braiding lateral morphotropic grain boundary in homogeneitic oxides

Interfaces formed by correlated oxides offer a critical avenue for discovering emergent phenomena and quantum states. However, the fabrication of oxide interfaces with variable crystallographic orientations and strain states integrated along a film plane is extremely challenge by conventional layer-by-layer stacking or self-assembling. Here, we report the creation of morphotropic grain boundaries (GBs) in laterally interconnected cobaltite homostructures. Single-crystalline substrates and suspended ultrathin freestanding membranes provide independent templates for coherent epitaxy and constraint on the growth orientation, resulting in seamless and atomically sharp GBs. Electronic states and magnetic behavior in hybrid structures are laterally modulated and isolated by GBs, enabling artificially engineered functionalities in the planar matrix. Our work offers a simple and scalable method for fabricating unprecedented innovative interfaces through controlled synthesis routes as well as provides a platform for exploring potential applications in neuromorphics, solid state batteries, and catalysis.

cond-mat.mtrl-sci↗

arXiv2022

Atomically engineered cobaltite layers for robust ferromagnetism

Emergent phenomena at heterointerfaces are directly associated with the bonding geometry of adjacent layers. Effective control of accessible parameters, such as the bond length and bonding angles, offers an elegant method to tailor competing energies of the electronic and magnetic ground states. In this study, we construct unit thick syntactic layers of cobaltites within a strongly tilted octahedral matrix via atomically precise synthesis. The octahedral tilt patterns of adjacent layers propagate into cobaltites, leading to a continuation of octahedral tilting while maintaining significant misfit tensile strain. These effects induce severe rumpling within an atomic plane of neighboring layers triggers the electronic reconstruction between the splitting orbitals. First-principles calculations reveal that the cobalt ions transits to a higher spin state level upon octahedral tilting, resulting in robust ferromagnetism in ultrathin cobaltites. This work demonstrates a design methodology for fine-tuning the lattice and spin degrees of freedom in correlated quantum heterostructures by exploiting epitaxial geometric engineering.

cond-mat.mtrl-sci↗

arXiv2022

Asymmetric Ground States in La$_{0.67}$Sr$_{0.33}$MnO$_3$/BaTiO$_3$ heterostructures Induced by Flexoelectric Bending

Misfit strain delivered from single-crystal substrates typically modifies the ground states of transition metal oxides, generating increasing interests in designing modern transducers and sensors. Here, we demonstrate that magnetotransport properties of La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) films were continuously tuned by uniaxial strain produced by a home-designed bending jig. The electrical conductivity and Curie temperature of LSMO films are enhanced by bending stresses. The resistivity of a u-shape bended LSMO decays three times faster than that of a n-shape bended LSMO as a response to the same magnitude of strain. The asymmetric magnetic states in uniaxially strained LSMO are attributed to the dual actions of Jahn-Teller distortion and strain gradient mediated flexoelectric fields in an adjacent ferroelectric layer. These findings of multi-field regulation in a single material provide a feasible means for developing flexible electronic and spintronic devices.

cond-mat.mtrl-sci↗

arXiv2021

Room-temperature ferromagnetism at an oxide/nitride interface

Heterointerfaces have led to the discovery of novel electronic and magnetic states because of their strongly entangled electronic degrees of freedom. Single-phase chromium compounds always exhibit antiferromagnetism following the prediction of Goodenough-Kanamori rules. So far, exchange coupling between chromium ions via hetero-anions has not been explored and the associated quantum states is unknown. Here we report the successful epitaxial synthesis and characterizations of chromium oxide (Cr2O3)-chromium nitride (CrN) superlattices. Room-temperature ferromagnetic spin ordering is achieved at the interfaces between these two antiferromagnets, and the magnitude of the effect decays with increasing layer thickness. First-principles calculations indicate that robust ferromagnetic spin interaction between Cr3+ ions via anion-hybridizations across the interface yields the lowest total energy. This work opens the door to fundamental understanding of the unexpected and exceptional properties of oxide-nitride interfaces and provides access to hidden phases at low-dimensional quantum heterostructures.

cond-mat.mtrl-sci↗

arXiv2021

Exchange coupling in synthetic anion-engineered chromia heterostructures

Control of magnetic states by external factors has garnered a mainstream status in spintronic research for designing low power consumption and fast-response information storage and processing devices. Previously, magnetic-cation substitution is the conventional means to induce ferromagnetism in an intrinsic antiferromagnet. Theoretically, the anion-doping is proposed to be another effect means to change magnetic ground states. Here we demonstrate the synthesis of high-quality single-phase chromium oxynitride thin films using in-situ nitrogen doping. Unlike antiferromagnetic monoanionic chromium oxide and nitride phases, chromium oxynitride exhibits a robust ferromagnetic and insulating state, as demonstrated by the combination of multiple magnetization probes and theoretical calculations. With increasing the nitrogen content, the crystal structure of chromium oxynitride transits from trigonal (R3c) to tetragonal (4mm) phase and its saturation magnetization reduces significantly. Furthermore, we achieve a large and controllable exchange bias field in the chromia heterostructures by synthetic anion engineering. This work reflects the anion engineering in functional oxides towards the potential applications in giant magnetoresistance and tunnelling junctions of modern magnetic sensors and read heads.

cond-mat.mtrl-sci↗

arXiv2021

Dynamics of anisotropic oxygen-ion migration in strained cobaltites

Orientation control of oxygen vacancy channel (OVC) is a highly desirable for tailoring oxygen diffusion as it serves fast transport channel in ion conductors, which is widespread exploited in solid-state fuel cells, catalysts, and ion-batteries. Direct observation of oxygen-ions hopping towards preferential vacant sites is a key to clarifying migration pathways. Here we report the anisotropic oxygen-ion migration mediated by strain in ultrathin cobaltites via in-situ thermal activation in an atomic-resolved transmission electron microscopy. Oxygen migration pathways are constructed on the basis of the atomic structure during the OVC switching, which is manifested as the vertical-to-horizontal OVC switching under tensile strain, but the horizontal-to-diagonal switching under compression. We evaluate the topotactic structural changes to OVC, determine the crucial role of tolerance factor for OVC stability and establish the strain-dependent phase diagram. Our work provides a practical guide for engineering OVC orientation that is applicable ionic-oxide electronics.

cond-mat.mtrl-sci↗

arXiv2021

Anisotropic electronic phase transition in CrN epitaxial thin films

Electronic phase transition in strongly correlated materials is extremely sensitive to the dimensionality and crystallographic orientations. Transition metal nitrides (TMNs) are seldom investigated due to the difficulty in fabricating the high-quality and stoichiometric single crystals. In this letter, we report the epitaxial growth and electronic properties of CrN films on different-oriented NdGaO3 (NGO) substrates. Astonishingly, the CrN films grown on (110)-oriented NGO substrates maintain a metallic phase, whereas the CrN films grown on (010)-oriented NGO substrates are semiconducting. We attribute the unconventional electronic transition in the CrN films to the strongly correlation with epitaxial strain. The effective modulation of bandgap by the anisotropic strain triggers the metal-to-insulator transition consequently. This work provides a convenient approach to modify the electronic ground states of functional materials using anisotropic strain and further stimulates the investigations of TMNs.

cond-mat.mtrl-sci↗

arXiv2021

Dimensional Control of Octahedral Tilt in SrRuO3 via Infinite-layered Oxides

Manipulation of octahedral distortion at atomic length scale is an effective means to tune the physical ground states of functional oxides. Previous work demonstrates that epitaxial strain and film thickness are variable parameters to modify the octahedral rotation and tilt. However, selective control of bonding geometry by structural propagation from adjacent layers is rarely studied. Here we propose a new route to tune the ferromagnetic response in SrRuO3 (SRO) ultrathin layers by oxygen coordination of adjacent SrCuO2 (SCO) layers. The infinite-layered CuO2 in SCO exhibits a structural transformation from "planar-type" to "chain-type" as reducing film thickness. These two orientations dramatically modify the polyhedral connectivity at the interface, thus altering the octahedral distortion of SRO. The local structural variation changes the spin state of Ru and hybridization strength between Ru 4d and O 2p orbitals, leading to a significant change in the magnetoresistance and anomalous Hall resistivity of SRO layers. These findings could launch further investigations into adaptive control of magnetoelectric properties in quantum oxide heterostructures using oxygen coordination.

cond-mat.mtrl-sci↗

arXiv2021

Structural Twinning-induced Insulating Phase in CrN (111) Films

Electronic states of a correlated material can be effectively modified by structural variations delivered from a single-crystal substrate. In this letter, we show that the CrN films grown on MgO (001) substrates have a (001) orientation, whereas the CrN films on α-Al2O3 (0001) substrates are oriented along (111) direction parallel to the surface normal. Transport properties of CrN films are remarkably different depending on crystallographic orientations. The critical thickness for the metal-insulator transition (MIT) in CrN 111 films is significantly larger than that of CrN 001 films. In contrast to CrN 001 films without apparent defects, scanning transmission electron microscopy results reveal that CrN 111 films exhibit strain-induced structural defects, e. g. the periodic horizontal twinning domains, resulting in an increased electron scattering facilitating an insulating state. Understanding the key parameters that determine the electronic properties of ultrathin conductive layers is highly desirable for future technological applications.

cond-mat.mtrl-sci↗

arXiv2020

Strong Ferromagnetism Achieved via Breathing Lattices in Atomically Thin Cobaltites

Low-dimensional quantum materials that remain strongly ferromagnetic down to mono layer thickness are highly desired for spintronic applications. Although oxide materials are important candidates for next generation of spintronic, ferromagnetism decays severely when the thickness is scaled to the nano meter regime, leading to deterioration of device performance. Here we report a methodology for maintaining strong ferromagnetism in insulating LaCoO3 (LCO) layers down to the thickness of a single unit cell. We find that the magnetic and electronic states of LCO are linked intimately to the structural parameters of adjacent "breathing lattice" SrCuO2 (SCO). As the dimensionality of SCO is reduced, the lattice constant elongates over 10% along the growth direction, leading to a significant distortion of the CoO6 octahedra, and promoting a higher spin state and long-range spin ordering. For atomically thin LCO layers, we observe surprisingly large magnetic moment (0.5 uB/Co) and Curie temperature (75 K), values larger than previously reported for any mono layer oxide. Our results demonstrate a strategy for creating ultra thin ferromagnetic oxides by exploiting atomic hetero interface engineering,confinement-driven structural transformation, and spin-lattice entanglement in strongly correlated materials.

cond-mat.mtrl-sci↗

arXiv2020

Strain-mediated high conductivity in ultrathin antiferromagnetic metallic nitrides

Strain engineering provides the ability to control the ground states and associated phase transition in the epitaxial films. However, the systematic study of intrinsic characters and their strain dependency in transition-metal nitrides remains challenging due to the difficulty in fabricating the stoichiometric and high-quality films. Here we report the observation of electronic state transition in highly crystalline antiferromagnetic CrN films with strain and reduced dimensionality. Shrinking the film thickness to a critical value of ~ 30 unit cells, a profound conductivity reduction accompanied by unexpected volume expansion is observed in CrN films. The electrical conductivity is observed surprisingly when the CrN layer as thin as single unit cell thick, which is far below the critical thickness of most metallic films. We found that the metallicity of an ultrathin CrN film recovers from an insulating behavior upon the removal of as-grown strain by fabrication of first-ever freestanding nitride films. Both first-principles calculations and linear dichroism measurements reveal that the strain-mediated orbital splitting effectively customizes the relatively small bandgap at the Fermi level, leading to exotic phase transition in CrN. The ability to achieve highly conductive nitride ultrathin films by harness strain-controlling over competing phases can be used for utilizing their exceptional characteristics.

cond-mat.mtrl-sci↗