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arXiv · 1906.06462

Nonlinear planar Hall effect

Pan He·Steven S. -L. Zhang·Dapeng Zhu·Shuyuan Shi·Olle G. Heinonen·Giovanni Vignale·Hyunsoo Yang
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Abstract

An intriguing property of three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. Here, we report the observation of a new type of Hall effect in a 3D TI Bi2Se3 film. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a π/2 angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of π/4 between the linear planar Hall effect and the anisotropic magnetoresistance. This novel nonlinear planar Hall effect originates from the conversion of a nonlinear transverse spin current to a charge current due to the concerted actions of spin-momentum locking and time reversal symmetry breaking, which also exists in a wide class of non-centrosymmetric materials with a large span of magnitude. It provides a new way to characterize and utilize the nonlinear spin-to-charge conversion in a variety of topological quantum materials.

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Pan He, Steven S. -L. Zhang, Dapeng Zhu, Shuyuan Shi, Olle G. Heinonen, Giovanni Vignale, Hyunsoo Yang. 2019-06-15. Nonlinear planar Hall effect. https://doi.org/10.1103/physrevlett.123.016801

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