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arXiv · 1907.09672

Tunable Coupling between Surface States of a Three-Dimensional Topological Insulator in the Quantum Hall Regime

Su Kong Chong·Kyu Bum Han·Taylor D. Sparks·Vikram V. Deshpande
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Abstract

The paired top and bottom Dirac surface states, each associated with a half-integer quantum Hall (QH) effect, and a resultant integer QH conductance ({\nu}e2/h), are hallmarks of a three-dimensional (3D) topological insulator (TI). In a dual-gated system, chemical potentials of the paired surface states are controlled through separate gates. In this work, we establish tunable capacitive coupling between the surface states of a bulk-insulating TI BiSbTeSe2 and study the effect of this coupling on QH plateaus and Landau level (LL) fan diagram via dual-gate control. We observe non-linear QH transitions at low charge density in strongly-coupled surface states, which are related to the charge-density-dependent coupling strength. A splitting of the N= 0 LL at the charge neutrality point for thin devices (but thicker than the 2D limit) indicates inter-surface hybridization possibly beyond single-particle effects. By applying capacitor charging models to the surface states, we explore their chemical potential as a function of charge density and extract the fundamental electronic quantity of LL energy gaps from dual-gated transport and capacitance measurements. These studies are essential for the realization of exotic quantum effects such as topological exciton condensation.

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Su Kong Chong, Kyu Bum Han, Taylor D. Sparks, Vikram V. Deshpande. 2019-07-23. Tunable Coupling between Surface States of a Three-Dimensional Topological Insulator in the Quantum Hall Regime. https://doi.org/10.1103/physrevlett.123.036804

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