arXiv subjects

Vikram V. Deshpande

Publications and source records attributed to Vikram V. Deshpande.

At least 19 recordsLinked to original sources

arXiv2026

Symmetry-Protected Weyl Nodal Loops in a Triangular Altermagnet

Weyl semimetals and altermagnets represent two distinct classes of quantum materials exhibiting nontrivial topological and magnetic order, respectively. Here we report the realization of a Weyl nodal-loop altermagnet in Cr$_7$Se$_8$, combining neutron diffraction and first-principles calculations. The hexagonal system hosts a coplanar $120^\circ$ compensated magnetic order on a triangular lattice, which breaks inversion-time-reversal and translation-time-reversal symmetries simultaneously while preserving a crystalline mirror plane. The resulting electronic structure features linearly dispersing nodal loops close to the Fermi level ($E_F$) confined to the mirror-invariant $k_z=0$ plane. Along high-symmetry directions, the crossings near $E_F$ form Dirac-like fourfold degeneracies in the absence of spin-orbit coupling; at generic momenta, these crossings split into twofold and form continuous Weyl-like nodal loops protected by mirror symmetry. The momentum-dependent spin polarization exhibits an $f$-wave-like pattern characteristic of odd-parity altermagnets.

cond-mat.mtrl-sci↗

arXiv2024

A quantized anomalous Hall effect above 4.2 K in stacked topological insulator/magnet bilayers

Quantized anomalous Hall effects (QAHEs) occur in remarkable electronic states which possess not only quantized Hall signals but in some cases regions of dissipationless electron transport. The initial demonstrations of a QAHE in a magnetically-doped topological insulator (TI) required temperatures below 100 mK, and since then a major focus of the field has been to increase the temperature scale. Here, we report quantized Hall signals up to 10 K (in what is known as the parity anomaly state) in TI/magnet bilayers made by mechanical assembly, rather than by conventional deposition techniques. This is a factor of 100 higher temperature than any previous realization of a QAHE in a proximity-coupled TI/magnet heterostructure made by deposition, and approximately twice the previous record for any QAHE system.

cond-mat.mes-hall↗

arXiv2023

Vernier Spectrum and Isospin State Control in Carbon Nanotube Quantum Dots

Commensurability phenomena abound in nature and are typically associated with mismatched lengths, as can occur in quasiperiodic systems. However, not all commensuration effects are spatial in nature. In finite-sized Dirac systems, an intriguing example arises in tilted or warped Dirac cones wherein the degeneracy in the speed of right- and left-moving electrons within a given Dirac cone or valley is lifted. Bound states can be purely fast-moving or purely slow-moving, giving rise to incommensurate energy level spacings and a vernier spectrum. In this work, we present evidence for this vernier spectrum in Coulomb blockade measurements of ultraclean suspended carbon nanotube quantum dots. The addition-energy spectrum of the quantum dots reveals an energy-level structure that oscillates between aligned and misaligned energy levels. Our data suggest that the fast- and slow-moving bound states hybridize at certain gate voltages. Thus, gate-voltage tuning can select states with varying degrees of hybridization, suggesting numerous applications based on accessing this isospin-like degree of freedom.

cond-mat.mes-hall↗

arXiv2022

Nanomechanical Characterization of an Antiferromagnetic Topological Insulator

The antiferromagnetic topological insulator MnBi2Te4 (MBT) exhibits an ideal platform to study exotic topological phenomena and magnetic properties. The transport signatures of magnetic phase transitions in the MBT family materials have been well-studied. However, their mechanical properties and magneto-mechanical coupling have not been well-explored. We use nanoelectromechanical systems to study the intrinsic magnetism in MBT thin flakes via their magnetostrictive coupling. We investigate mechanical resonance signatures of magnetic phase transitions from antiferromagnetic (AFM) to canted antiferromagnetic (cAFM) to ferromagnetic (FM) phases versus magnetic field at different temperatures. The spin-flop transitions in MBT are revealed by frequency shifts of mechanical resonance. With temperatures going above TN, the transitions disappear in the resonance frequency map, consistent with transport measurements. We use a magnetostrictive model to correlate the frequency shifts with the spin-canting states. Our work demonstrates a technique to study magnetic phase transitions, magnetization and magnetoelastic properties of the magnetic topological insulator.

cond-mat.mes-hall↗

arXiv2022

Gate-tunable anomalous Hall effect in a 3D topological insulator/2D magnet van der Waals heterostructure

We demonstrate advantages of samples made by mechanical stacking of exfoliated van der Waals materials for controlling the topological surface state of a 3-dimensional topological insulator (TI) via interaction with an adjacent magnet layer. We assemble bilayers with pristine interfaces using exfoliated flakes of the TI BiSbTeSe2 and the magnet Cr2Ge2Te6, thereby avoiding problems caused by interdiffusion that can affect interfaces made by top-down deposition methods. The samples exhibit an anomalous Hall effect (AHE) with abrupt hysteretic switching. For the first time in samples composed of a TI and a separate ferromagnetic layer, we demonstrate that the amplitude of the AHE can be tuned via gate voltage with a strong peak near the Dirac point. This is the signature expected for the AHE due to Berry curvature associated with an exchange gap induced by interaction between the topological surface state and an out-of-plane-oriented magnet.

cond-mat.mes-hall↗

arXiv2020

Topological Phase Transitions in a Hybridized Three-Dimensional Topological Insulator

As the thickness of a three-dimensional (3D) topological insulator (TI) becomes comparable to the penetration depth of the surface states, quantum tunneling between surfaces turns their gapless Dirac electronic structure into a gapped surface state. Analytical formulation suggests that the hybridization gap scales exponentially with decrease in number of layers while the system oscillates between topologically trivial and non-trivial insulators. This work explores the transport properties of a 3D TI in the inter-surface hybridization regime. By experimentally probing the hybridization gap as a function of BiSbTeSe2 thickness using three different methods, we map the crossover from the 3D to 2D state. In the 2D topological state, we observe a finite longitudinal conductance at ~2e2/h when the Fermi level is aligned within the surface gap, indicating a quantum spin Hall (QSH) state. Additionally, we study the response of trivial and non-trivial hybridization gapped states modulated by external out-of-plane magnetic and electric fields. Our revelations of surface gap-closing and/or reopening features are strongly indicative of topological phase transitions (TPTs) in the hybridization gap regime, realizing magnetic/electric field switching between band insulating and QSH states with immense potential for practical applications.

cond-mat.mes-hall↗

arXiv2020

Landau Levels of Topologically-Protected Surface States Probed by Dual-Gated Quantum Capacitance

Spectroscopy of discrete Landau levels (LLs) in bulk-insulating three-dimensional topological insulators (3D TIs) in perpendicular magnetic field characterizes the Dirac nature of their surface states. Despite a number of studies demonstrating the quantum Hall effect (QHE) of topological surface states, quantitative evaluation of the LL energies, which serve as fundamental electronic quantities for study of the quantum states, is still limited. In this work, we explore the density of states of LLs by measuring quantum capacitance (CQ) in a truly bulk insulating 3D TI via a van der Waals heterostructure configuration. By applying dual gate voltages, we access the individual surface states' LLs and extract their chemical potentials to quantify the LL spacings of each surface. We evaluate the LLs' energies at two distinguished QH states, namely dissipationless (ν= +/-1) and dissipative (ν= 0) states in the 3D TI.

cond-mat.mes-hall↗

arXiv2020

Tunable Coupling between Surface States of a Three-Dimensional Topological Insulator in the Quantum Hall Regime

The paired top and bottom Dirac surface states, each associated with a half-integer quantum Hall (QH) effect, and a resultant integer QH conductance (νe2/h), are hallmarks of a three-dimensional (3D) topological insulator (TI). In a dual-gated system, chemical potentials of the paired surface states are controlled through separate gates. In this work, we establish tunable capacitive coupling between the surface states of a bulk-insulating TI BiSbTeSe2 and study the effect of this coupling on QH plateaus and Landau level (LL) fan diagram via dual-gate control. We observe non-linear QH transitions at low charge density in strongly-coupled surface states, which are related to the charge-density-dependent coupling strength. A splitting of the N= 0 LL at the charge neutrality point for thin devices (but thicker than the 2D limit) indicates inter-surface hybridization possibly beyond single-particle effects. By applying capacitor charging models to the surface states, we explore their chemical potential as a function of charge density and extract the fundamental electronic quantity of LL energy gaps from dual-gated transport and capacitance measurements. These studies are essential for the realization of exotic quantum effects such as topological exciton condensation.

cond-mat.mes-hall↗

arXiv2019

Band-Gap-Dependent Electronic Compressibility of Carbon Nanotubes in the Wigner Crystal Regime

Electronic compressibility, the second derivative of ground state energy with respect to total electron number, is a measurable quantity that reveals the interaction strength of a system and can be used to characterize the orderly crystalline lattice of electrons known as the Wigner crystal. Here, we measure the electronic compressibility of individual suspended ultraclean carbon nanotubes in the low-density Wigner crystal regime. Using low-temperature quantum transport measurements, we determine the compressibility as a function of carrier number in nanotubes with varying band gaps. We observe two qualitatively different trends in compressibility versus carrier number, both of which can be explained using a theoretical model of a Wigner crystal that accounts for both the band gap and the confining potential experienced by charge carriers. We extract the interaction strength as a function of carrier number for individual nanotubes and show that the compressibility can be used to distinguish between strongly and weakly interacting regimes.

cond-mat.str-el↗

arXiv2018

Sagnac Electron Interference as a Probe of Electronic Structure

Electronic analogues of optical interferences have been used to investigate quantum phenomena in condensed matter. However, the most sensitive, Sagnac optical interference, has not been realized in the electronic domain. We report electronic Sagnac interference using ultraclean carbon nanotubes. We show that Sagnac interference manifests as conductance oscillations versus gate voltage. Compared to Fabry-Perot conductance oscillations, Sagnac oscillations have a larger period and are more robust to temperature. Using nanotubes of known structure, we show that Sagnac oscillations are a probe of nanotube chirality in a transport measurement. Furthermore, upon tuning the system through a topological phase transition in a magnetic field, we find that the Sagnac interference undergoes a π phase-shift. Our interferometry may be used for electronic structure characterization and study of many-body & photogalvanic effects in these model chiral one-dimensional systems.

cond-mat.mes-hall↗

arXiv2018

Topological Insulator-Based van der Waals Heterostructures for Effective Control of Massless and Massive Dirac Fermions

Three dimensional (3D) topological insulators (TIs) are an important class of materials with applications in electronics, spintronics and quantum computing. With the recent development of truly bulk insulating 3D TIs, it has become possible to realize surface dominated phenomena in electrical transport measurements e.g. the quantum Hall (QH) effect of massless Dirac fermions in topological surface states (TSS). However, to realize more advanced devices and phenomena, there is a need for a platform to tune the TSS or modify them e.g. gap them by proximity with magnetic insulators, in a clean manner. Here we introduce van der Waals (vdW) heterostructures in the form of topological insulator/insulator/graphite to effectively control chemical potential of the TSS. Two types of gate dielectrics, normal insulator hexagonal boron nitride (hBN) and ferromagnetic insulator Cr2Ge2Te6 (CGT) are utilized to tune charge density of TSS in the quaternary TI BiSbTeSe2. hBN/graphite gating in the QH regime shows improved quantization of TSS by suppression of magnetoconductivity of massless Dirac fermions. CGT/graphite gating of massive Dirac fermions in the QH regime yields half-quantized Hall conductance steps and a measure of the Dirac gap. Our work shows the promise of the vdW platform in creating advanced high-quality TI-based devices.

cond-mat.mes-hall↗

arXiv2018

Enhancement in surface mobility and quantum transport of Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) topological insulator by controlling the crystal growth conditions

Despite numerous studies on three-dimensional topological insulators (3D TIs), the controlled growth of high quality (bulk-insulating and high mobility) TIs remains a challenging subject. This study investigates the role of growth methods on the synthesis of single crystal stoichiometric BiSbTeSe2 (BSTS). Three types of BSTS samples are prepared using three different methods, namely melting growth (MG), Bridgman growth (BG) and two-step melting-Bridgman growth (MBG). Our results show that the crystal quality of the BSTS depend strongly on the growth method. Crystal structure and composition analyses suggest a better homogeneity and highly-ordered crystal structure in BSTS grown by MBG method. This correlates well to sample electrical transport properties, where a substantial improvement in surface mobility is observed in MBG BSTS devices. The enhancement in crystal quality and mobility allow the observation of well-developed quantum Hall effect at low magnetic field.

cond-mat.mtrl-sci↗

arXiv2016

Graphene mechanical oscillators with tunable frequency

Oscillators, which produce continuous periodic signals from direct current power, are central to modern communications systems, with versatile applications such as timing references and frequency modulators. However, conventional oscillators typically consist of macroscopic mechanical resonators such as quartz crystals, which require excessive off-chip space. Here we report oscillators built on micron-size, atomically-thin graphene nanomechanical resonators, whose frequencies can be electrostatically tuned by as much as 14\%. The self-sustaining mechanical motion of the oscillators is generated and transduced at room temperature by simple electrical circuitry. The prototype graphene voltage controlled oscillators exhibit frequency stability and modulation bandwidth sufficient for modulation of radio-frequency carrier signals. As a demonstration, we employ a graphene oscillator as the active element for frequency modulated signal generation, and achieve efficient audio signal transmission.

cond-mat.mes-hall↗

arXiv2016

SU-8 clamped CVD graphene drum resonators

Graphene mechanical resonators are the ultimate two-dimensional nanoelectromechanical systems (NEMS) with applications in sensing and signal processing. While initial devices have shown promising results, an ideal graphene NEMS resonator should be strain engineered, clamped at the edge without trapping gas underneath, and electrically integratable. In this letter, we demonstrate fabrication and direct electrical measurement of circular SU-8 polymer-clamped chemical vapor deposition (CVD) graphene drum resonators. The clamping increases device yield and responsivity, while providing a cleaner resonance spectrum from eliminated edge modes. Furthermore, this resonator is highly strained, indicating its potential in strain engineering for performance enhancement.

cond-mat.mes-hall↗

arXiv2016

Modulation of mechanical resonance by chemical potential oscillation in graphene

The classical picture of the force on a capacitor assumes a large density of electronic states, such that the electrochemical potential of charges added to the capacitor is given by the external electrostatic potential and the capacitance is determined purely by geometry. Here we consider capacitively driven motion of a nano-mechanical resonator with a low density of states, in which these assumptions can break down. We find three leading-order corrections to the classical picture: the first of is a modulation in the static force due to variation in the internal chemical potential, the second and third are change in static force and dynamic spring constant due to the rate of change of chemical potential, expressed as the quantum (density of states) capacitance. As a demonstration, we study a capacitively driven graphene mechanical resonators, where the chemical potential is modulated independently of the gate voltage using an applied magnetic field to manipulate the energy of electrons residing in discrete Landau levels. In these devices, we observe large periodic frequency shifts consistent with the three corrections to the classical picture. In devices with extremely low strain and disorder, the first correction term dominates and the resonant frequency closely follows the chemical potential. The theoretical model fits the data with only one adjustable parameter representing disorder-broadening of the Landau levels. The underlying electromechanical coupling mechanism is not limited the particular choice of material, geometry, or mechanism for variation in chemical potential, and can thus be extended to other low-dimensional systems.

cond-mat.mes-hall↗

arXiv2013

Tunable electronic correlation effects in nanotube-light interactions

Electronic many-body correlation effects in one-dimensional (1D) systems such as carbon nanotubes have been predicted to modify strongly the nature of photoexcited states. Here we directly probe this effect using broadband elastic light scattering from individual suspended carbon nanotubes under electrostatic gating conditions. We observe significant shifts in optical transition energies, as well as line broadening, as the carrier density is increased. The results demonstrate the differing role of screening of many-body electronic interactions on the macroscopic and microscopic length scales, a feature inherent to quasi-1D systems. Our findings further demonstrate the possibility of electrical tuning of optical transitions and provide a basis for understanding of various optical phenomena in carbon nanotubes and other quasi-1D systems in the presence of charge carrier doping.

cond-mat.mes-hall↗

arXiv2010

Radio frequency electrical transduction of graphene mechanical resonators

We report radio frequency (rf) electrical readout of graphene mechanical resonators. The mechanical motion is actuated and detected directly by using a vector network analyzer, employing a local gate to minimize parasitic capacitance. A resist-free doubly clamped sample with resonant frequency ~ 34 MHz, quality factor ~ 10000 at 77 K, and signal-to-background ratio of over 20 dB is demonstrated. In addition to being over two orders of magnitude faster than the electrical rf mixing method, this technique paves the way for use of graphene in rf devices such as filters and oscillators.

cond-mat.mes-hall↗

arXiv2009

Giant Raman Intensity Modulation in Pristine Carbon Nanotubes

Large variations of up to two orders of magnitude are observed in the Raman intensity of pristine, suspended quasi-metallic single-walled carbon nanotubes in response to applied gate potentials. No change in the resonance condition is observed, and all Raman bands exhibit the same changes in intensity, regardless of phonon energy or laser excitation energy. The effect is not observed in semiconducting nanotubes. The electronic energy gaps correlate with the drop in the Raman intensity, and the recently observed Mott insulating behavior is suggested as a possible explanation for this effect.

cond-mat.mes-hall↗