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arXiv · 1909.08133

Spin-Orbit-Torque Field-Effect Transistor (SOTFET): Proposal for a New Magnetoelectric Memory

Xiang Li·Phillip Dang·Joseph Casamento·Zexuan Zhang·Olalekan Afuye·Antonio B. Mei·Alyssa B. Apsel·Darrell G. Schlom·Debdeep Jena·Daniel C. Ralph·Huili Grace Xing
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Abstract

Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high durability. The recent availability of multiferroic materials provides an opportunity to directly couple the change in spin states of a magnetic memory to a charge change in a semiconductor transistor. In this work, we propose and analyze the spin-orbit torque field-effect transistor (SOTFET), a device with the potential to significantly boost the energy efficiency of spin-based memories, and to simultaneously offer a palette of new functionalities.

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Xiang Li, Phillip Dang, Joseph Casamento, Zexuan Zhang, Olalekan Afuye, Antonio B. Mei, Alyssa B. Apsel, Darrell G. Schlom, Debdeep Jena, Daniel C. Ralph, Huili Grace Xing. 2019-09-17. Spin-Orbit-Torque Field-Effect Transistor (SOTFET): Proposal for a New Magnetoelectric Memory. https://doi.org/10.1063/5.0002909

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