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arXiv · 1910.11549

Voltage-Controlled Magnonic Spin Tunneling Junction

Kohei Ohgane·Yuta Yahagi·Daisuke Miura·Akimasa Sakuma
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Abstract

We theoretically investigate the effective exchange interaction, $J_\mathrm{eff}$, mediated by conductive electrons within a nonmagnetic metal spacer, in the presence of a bias voltage, sandwiched by two ferromagnetic insulators. On the basis of the tight-binding model, we show the voltage and spacer thickness dependences of $J_\mathrm{eff}$, and its contorollability is demonstrated. We also propose a new magnonic device with the functions of both field effect transistor and non-volatile memory.

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Kohei Ohgane, Yuta Yahagi, Daisuke Miura, Akimasa Sakuma. 2019-10-25. Voltage-Controlled Magnonic Spin Tunneling Junction. https://doi.org/10.7566/jpsj.89.013601

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