Searcharxiv⌕ Search
Home/Archive/arXiv

arXiv · 1911.11183

Identification of ferrimagnetic orbitals preventing spinel degradation by charge ordering in Li$_x$Mn$_2$O$_4$

Hasnain Hafiz·Kosuke Suzuki·Bernardo Barbiellini·Yuki Orikasa·Stanislaw Kaprzyk·Naruki Tsuji·Kentaro Yamamoto·Ayumu Terasaka·Kazushi Hoshi·Yoshiharu Uchimoto·Yoshiharu Sakurai·Hiroshi Sakurai·Arun Bansil
View original source ↗Read source document ↗Export metadata ↓

Abstract

Spinel Li$_x$Mn$_2$O$_4$ is a key cathode material that is used extensively in commercial Li-ion batteries. A challenge with this material has been that the capacity of the battery fades with cycling, an effect that can be traced to the presence of an anti-ferromagnetic insulator phase in the fully lithiated LiMn$_2$O$_4$ (LMO) and the associated charge disproportionation that drives distortions of the MnO$_6$ octahedra. Here, by combining x-ray magnetic Compton scattering experiments with parallel first-principles computations, we show that the anti-ferromagnetic phase of LMO is surrounded by a robust ferrimagnetic metallic phase, which becomes stable when even a small amount of Li is removed from or added to the charge-ordered LMO. In this surprising ferrimagnetic state, charge-ordering and octahedral distortions are found to be strongly suppressed. We identify the nature of the ferrimagnetic orbitals involved through theoretical and experimental analyses of the magnetic Compton scattering spectra.

Explore related subjects

cond-mat.mtrl-sci

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Hasnain Hafiz, Kosuke Suzuki, Bernardo Barbiellini, Yuki Orikasa, Stanislaw Kaprzyk, Naruki Tsuji, Kentaro Yamamoto, Ayumu Terasaka, Kazushi Hoshi, Yoshiharu Uchimoto, Yoshiharu Sakurai, Hiroshi Sakurai, Arun Bansil. 2019-11-25. Identification of ferrimagnetic orbitals preventing spinel degradation by charge ordering in Li$_x$Mn$_2$O$_4$. https://doi.org/10.1103/physrevb.100.205104

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci↗
arXiv2026

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci↗
arXiv2026

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci↗