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arXiv · 1912.11715

Materials Relevant to Realizing a Field-Effect Transistor based on Spin-Orbit Torques

Phillip Dang·Zexuan Zhang·Joseph Casamento·Xiang Li·Jashan Singhal·Darrell G. Schlom·Daniel C. Ralph·Huili Grace Xing·Debdeep Jena
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Abstract

Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque field effect transistor (SOTFET) is a proposed device that couples a spin-orbit-torque-controlled ferromagnet to a semiconducting transistor channel via the transduction in a magnetoelectric multiferroic. This allows the SOTFET to operate as both a memory and a logic device, but its realization depends on the choice of appropriate materials. In this report, we discuss and parametrize the types of materials that can lead to a SOTFET heterostructure.

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Phillip Dang, Zexuan Zhang, Joseph Casamento, Xiang Li, Jashan Singhal, Darrell G. Schlom, Daniel C. Ralph, Huili Grace Xing, Debdeep Jena. 2019-12-25. Materials Relevant to Realizing a Field-Effect Transistor based on Spin-Orbit Torques. https://doi.org/10.1109/jxcdc.2019.2961333

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