Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

Monia Spera; Giuseppe Greco; Raffaella Lo Nigro; Corrado Bongiorno; Filippo Giannazzo; Marcin Zielinski; Francesco La Via; Fabrizio Roccaforte

doi:10.1016/j.mssp.2019.01.015

arXiv · 2001.05159

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

Monia Spera·Giuseppe Greco·Raffaella Lo Nigro·Corrado Bongiorno·Filippo Giannazzo·Marcin Zielinski·Francesco La Via·Fabrizio Roccaforte

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Abstract

This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni contacts has been studied employing several characterization techniques. Ni films annealed at 950{\deg}C form Ohmic contacts on moderately n-type doped 3C-SiC (ND ~ 1x1017cm-3), with a specific contact resistance of 3.7x10-3 {\Omega}cm2. The main phase formed upon annealing in this contact was nickel silicide (Ni2Si), with randomly dispersed carbon in the reacted layer. In the case of a p-type 3C-SiC with a high doping level (NA ~ 5x1019cm-3), Ti/Al/Ni contacts were preferable to Ni ones, as they gave much lower values of the specific contact resistance (1.8x10-5 {\Omega}cm2). Here, an Al3Ni2 layer was formed in the uppermost part of the contact, while TiC was detected at the interface. For this system, a temperature dependent electrical characterization allowed to establish that the thermionic field emission rules the current transport at the interface. All these results can be useful for the further development of a devices technology based on the 3C-SiC polytype.

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Monia Spera, Giuseppe Greco, Raffaella Lo Nigro, Corrado Bongiorno, Filippo Giannazzo, Marcin Zielinski, Francesco La Via, Fabrizio Roccaforte. 2020-01-15. Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon. https://doi.org/10.1016/j.mssp.2019.01.015

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