Searcharxiv⌕ Search

arXiv subjects

Corrado Bongiorno

Publications and source records attributed to Corrado Bongiorno.

11 recordsLinked to original sources

Resolving the Metastable Si-XIII Structure through Convergent Theory and Experiment

Silicon is the undisputed cornerstone of modern technology, with applications ranging from micro- and opto-electronics to quantum technologies. Recently, the exploration of its allotropes has emerged as a pivotal frontier for engineering materials with tailored optical and electronic functionalities. High-pressure experiments have revealed several metastable silicon phases, among which is Si-XIII. First observed more than 20 years ago, this phase has remained structurally unidentified, representing a significant gap in our understanding of elemental silicon allotropy. In this work, a convergent methodology is employed combining advanced theoretical modeling with experimental characterization to finally resolve the long-standing structural assignment of Si-XIII. Guided by careful experimental observations, a structural model validated through first-principles optimization and systematically tested against multiple experimental signatures is constructed. All the fingerprints of this phase are rationalized by our proposed crystal structure: interplanar spacings, Raman frequencies, thermodynamic stability, and kinetic pathways. These findings provide a crucial missing piece in the high-pressure phase diagram of silicon and demonstrate the power of integrating computational predictions with experimental validation to resolve complex structural problems in materials science.

cond-mat.mtrl-sci↗

Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation

We present a comprehensive study on the formation of micrometer-sized, textured hexagonal diamond silicon (hd-Si) crystals via nanoindentation followed by annealing. Utilizing advanced characterization techniques such as polarized Raman spectroscopy, high-resolution transmission electron microscopy, and electron energy-loss spectroscopy, we demonstrate the successful transformation of silicon into high-quality hd-Si. The experimental results are further supported by first-principles calculations and molecular dynamics simulations. Notably, the hd-Si phase consists of nanometer-sized grains with slight misorientations, organized into large micrometer-scale textured domains. These findings underscore the potential of nanoindentation as a precise and versatile tool for inducing pressure-driven phase transformations, particularly for the stabilization of hexagonal silicon. The textured nature of hd-Si also presents a unique opportunity to tailor its optical properties, opening new avenues for its application in semiconductor and optoelectronic devices.

cond-mat.mtrl-sci↗

Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates

In this paper, the Ni Schottky barrier on GaN epilayer grown on free standing substrates has been characterized. First, transmission electrical microscopy (TEM) images and nanoscale electrical analysis by conductive atomic force microscopy (C-AFM) of the bare material allowed visualizing structural defects in the crystal, as well as local inhomogeneities of the current conduction. The forward current-voltage (I-V) characteristics of Ni/GaN vertical Schottky diodes fabricated on the epilayer gave average values of the Schottky barrier height of 0.79 eV and ideality factor of 1.14. A statistical analysis over a set of diodes, combined with temperature dependence measurements, confirmed the formation of an inhomogeneous Schottky barrier in this material. From a plot of FB versus n, an ideal homogeneous barrier close to 0.9 eV was estimated, similar to that extrapolated by capacitance-voltage (C-V) analysis. Local I-V curves, acquired by means of C-AFM, displayed the inhomogeneous distribution of the onset of current conduction, which in turn resembles the one observed in the macroscopic Schottky diodes. Finally, the reverse characteristic of the diodes fabricated in the defects-free region have been acquired at different temperature and its behaviour has been described by the thermionic field emission (TFE) model.

cond-mat.mtrl-sci↗

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs

In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during device on-state. The origin of the gate current variations under stress has been ascribed to charge trapping occurring at the different interfaces in the metal/p-GaN/AlGaN/GaN system. In particular, depending on the stress bias level, electrons (VG < 6 V) or holes (VG > 6 V) are trapped, causing a positive or negative threshold voltage shift {DVTH, respectively. By monitoring the gate current variations at different temperatures, the activation energies associated to the electrons and holes trapping could be determined and correlated with the presence of nitrogen (electron traps) or gallium (hole traps) vacancies. Moreover, the electrical measurements suggested the generation of a new electron-trap upon long-time bias stress, associated to the creation of crystallographic dislocation-like defects extending across the different interfaces (p-GaN/AlGaN/GaN) of the gate stack.

physics.app-ph↗

Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations

In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the channel mobility and threshold voltage stability in 4H-SiC MOSFETs. In particular, PDA in NO gave a higher channel mobility (55 cm2V-1s-1) than PDA in N2O (20 cm2V-1s-1), and the subthreshold behavior of the devices confirmed a lower total amount of interface states for the NO case. This latter could be also deduced from the behavior of the capacitance-voltage characteristics of 4H-SiC MOSFETs measured in gate controlled diode configuration. On the other hand, cyclic gate bias stress measurements allowed to separate the contributions of interface states (Nit) both on the upper and bottom parts of the 4H-SiC band gap and near interface oxide traps (NIOTs) in the two oxides. In particular, it was found that NO annealing reduced the total density of charges trapped at the interface states down to 3 x 1011 cm- 2 and those trapped inside the oxide down to 1 x 1011 cm-2. Electron energy loss spectroscopy demonstrated that the reduction of these traps in the NO annealed sample is due to the lower amounts of sub-stoichiometric silicon oxide (~ 1nm) and carbon-related defects (< 1nm) at the interface, respectively. This correlation represents a further step in the comprehension of the physics of the SiO2/4H-SiC interface explaining the mobility and threshold voltage behavior of 4H-SiC MOSFETs.

cond-mat.mtrl-sci↗

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni contacts has been studied employing several characterization techniques. Ni films annealed at 950°C form Ohmic contacts on moderately n-type doped 3C-SiC (ND ~ 1x1017cm-3), with a specific contact resistance of 3.7x10-3 Ωcm2. The main phase formed upon annealing in this contact was nickel silicide (Ni2Si), with randomly dispersed carbon in the reacted layer. In the case of a p-type 3C-SiC with a high doping level (NA ~ 5x1019cm-3), Ti/Al/Ni contacts were preferable to Ni ones, as they gave much lower values of the specific contact resistance (1.8x10-5 Ωcm2). Here, an Al3Ni2 layer was formed in the uppermost part of the contact, while TiC was detected at the interface. For this system, a temperature dependent electrical characterization allowed to establish that the thermionic field emission rules the current transport at the interface. All these results can be useful for the further development of a devices technology based on the 3C-SiC polytype.

physics.app-ph↗

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

This paper reports on the physical and temperature-dependent electrical characterizations of the oxide/semiconductor interface in MOS capacitors with a SiO2 layer deposited on 4H-SiC using dichlorosilane and nitrogen-based vapor precursors. The capacitors, subjected to a standard post deposition annealing process in N2O, exhibited an interface state density Dit = 9.0 x 1011cm-2eV-1 below the conduction band edge. At room temperature, a barrier height (conduction band offset) of 2.8 eV was observed, along with the presence of negative charges in the insulator. The SiO2 insulating properties were evaluated by studying the experimental temperature-dependence of the gate current. In particular, the temperature-dependent electrical measurements showed a negative temperature coefficient of the Fowler-Nordheim electron barrier height (dFB/dT = - 0.98 meV/°C), which was very close to the expected value for an ideal SiO2/4H-SiC system and much lower compared to the values reported for thermally grown SiO2. This smaller dependence of FB on the temperature and the increase of the current level with temperature in the transcharacteristics measured in the relative fabricated MOSFETs represents a clear advantage of our deposited SiO2 for the operation of MOSFET devices at high temperatures.

physics.app-ph↗

Inter-diffusion, melting and reaction interplay in Ni/4H-SiC under excimer laser annealing

We investigated the complex interaction between a nickel layer and a 4H-SiC substrate under UV-laser irradiation since the early stages of the atomic inter-diffusion. An exhaustive description is still lacking in the literature. A multimethod approach based on Transmission Electron Microscopy, Energy Dispersive Spectroscopy and Diffraction (electron and X-ray) techniques has been implemented for a cross-correlated description of the final state of the contact after laser irradiation. They detailed the stoichiometry and the lattice structure of each phase formed as well as the Ni/Si alloy profile along the contact for laser fluences in the range 2.4-3.8 J/cm2. To make a bridge between process conditions and post-process characterizations, time dependent ultra-fast phenomena (laser pulse about 160ns), such as intermixing driven melting and Ni-silicides reactions, have been simulated by a modified phase fields approach in the proper many-compounds formulation. We disclose that raising laser fluence has multiple effects: 1) the thickness of the silicide layer formed at the interface with 4H-SiC expands; 2) the silicon content into the reacted layer increases; 3) a Ni2Si phase is promoted at the highest fluence 3.8 J/cm2; 4) silicon atomic diffusion into a topmost residual nickel layer occurs, with the Ni/Si ratio increasing towards the contact surface.

physics.app-ph↗

Thermal Annealing Effect on Electrical and Structural Properties of Tungsten Carbide Schottky Contacts on AlGaN/GaN heterostructures

Tungsten carbide (WC) contacts have been investigated as a novel gold-free Schottky metallization for AlGaN/GaN heterostructures. The evolution of the electrical and structural/compositional properties of the WC/AlGaN contact has been monitored as a function of the annealing temperature in the range from 400 to 800°C. The Schottky barrier height ($Φ$B) at WC/AlGaN interface, extracted from the forward current-voltage characteristics of the diode, decreased from 0.8 eV in the as-deposited and 400°C annealed sample, to 0.56 eV after annealing at 800 °C. This large reduction of $Φ$B was accompanied by a corresponding increase of the reverse bias leakage current. Transmission electron microscopy coupled to electron energy loss spectroscopy analyses revealed the presence of oxygen (O) uniformly distributed in the WC layer, both in the as-deposited and 400°C annealed sample. Conversely, oxygen accumulation in a 2-3 nm thin W-O-C layer at the interface with AlGaN was observed after the annealing at 800 °C, as well as the formation of W2C grains within the film (confirmed by X-ray diffraction analyses). The formation of this interfacial W-O-C layer is plausibly the main origin of the decreased $Φ$B and the increased leakage current in the 800°C annealed Schottky diode, whereas the decreased O content inside the WC film can explain the reduced resistivity of the metal layer. The results provide an assessment of the processing conditions for the application of WC as Schottky contact for AlGaN/GaN heterostructures.

physics.app-ph↗

Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Studying the electrical and structural properties of the interface of the gate oxide (SiO2) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for understanding and optimizing the performances of metal-oxide-semiconductor field effect transistor (MOSFETs). In this paper, near interface oxide traps (NIOTs) in lateral 4H-SiC MOSFETs were investigated combining transient gate capacitance measurements (C-t) and state of the art scanning transmission electron microscopy in electron energy loss spectroscopy (STEM-EELS) with sub-nm resolution. The C-t measurements as a function of temperature indicated that the effective NIOTs discharge time is temperature independent and electrons from NIOTs are emitted toward the semiconductor via-tunnelling. The NIOTs discharge time was modelled taking into account also the interface state density in a tunnelling relaxation model and it allowed to locate traps within a tunnelling distance up to 1.3nm from the SiO2/4H-SiC interface. On the other hand, sub-nm resolution STEM-EELS revealed the presence of a Non-Abrupt (NA) SiO2/4H-SiC interface. The NA interface shows the re-arrangement of the carbon atoms in a sub-stoichiometric SiOx matrix. A mixed sp2/sp3 carbon hybridization in the NA interface region suggests that the interfacial carbon atoms have lost their tetrahedral SiC coordination.

physics.app-ph↗

Pseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon

In a system consisting of two different lattices, the structural stability is ensured when an epitaxial relationship occurs between them and allows the system to retain the stress, avoiding the formation of a polycristalline film. The phenomenon occurs if the film thickness does not exceed a critical value. Here we show that, in spite of its orthorombic structure, a 14nm-thick NiSi layer can three-dimensionally (3D) adapt to the cubic Si lattice by forming transrotational domains. Each domain arises by the continuous bending of the NiSi lattice, maintaining a close relationship with the substrate structure. The presence of transrotational domains does not cause a roughening of the layer but instead it improves the structural and electrical stability of the silicide in comparison with a 24nm-thick layer formed using the same annealing process. These results have relevant implications on thickness scaling of NiSi layers currently used as metallizations of electronic devices.

cond-mat.mtrl-sci↗