SearcharxivSearch

arXiv · 2005.14120

A highly sensitive piezoresistive sensor based on MXene and polyvinyl butyral with a wide detection limit and low power consumption

Abstract

As a new class of two-dimensional transition-metal carbide and carbonitride, MXene have been widely used in the energy storage, sensor, catalysis, electromagnetic interference shielding and other field. It is a challenge to simultaneously realize a sensor of extremely high sensitivity, wide detection limits, low power consumption and good mechanical stability. In this work, taking advantage of high conductivity of MXene and porous structure of polyvinyl butyral, a highly sensitive piezoresistive sensor was fabricated. The fabricated MXene/PVB-based sensor exhibits highly sensitive reliably with a factor of ~11.9 kPa^-1, ~1.15 kPa^-1 and ~0.20 kPa^-1 in the ranges of 31.2 Pa-312 Pa, 312 Pa- 62.4 kPa and 62.4 kPa-1248.4 kPa, respectively. The sensor has a wide detection range (~31.2 Pa to ~2.205 MPa), low detection limit (6.8 Pa), low detection voltage (0.1 mV), low power consumption (~3.6 * 10^-10 W), fast response time ( ~110 ms), as well as good mechanical stability (over 10,000 maximum-pressure cycles). Moreover, it is demonstrated that the sensor can detect subtle bending and release activities of human, including arterial pulses and voice signal, which is potentially suitable as a wide detection range, highly sensitive and low power consumption piezoresistive sensor. This work provides a new avenue to expand the application of MXene-based flexible pressure sensor in the field of wide sensing range and ultra-low power consumption.

Explore related subjects

Keep this discovery

BibTeXRIS

Ruzhan Qin, Mingjun Hu, Xin Li, Li Yan, Chuanguang Wu, Jinzhang Liu, Haibin Gao, Guangcun Shan, Wei Huang. 2020-05-28. A highly sensitive piezoresistive sensor based on MXene and polyvinyl butyral with a wide detection limit and low power consumption. https://doi.org/10.1039/d0nr02012e

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Janus Dipoles: Fundamentals, Realizations, and Emerging Applications

The Janus dipole - featuring orthogonally oriented electric and magnetic dipoles with a 90-degree phase difference - has emerged as a powerful paradigm for wave manipulation. Unlike traditional Huygens dipoles used for directional control, this unique configuration exhibits strongly asymmetric, face-selective near-field behavior while maintaining a quasi-isotropic far-field radiation pattern. These remarkable properties make the Janus dipole an essential platform for directional wave shaping, with wide-ranging applications in on-chip photonics, quantum interactions, and wireless power transfer. This review systematically traces the rapid development of the Janus dipole from its foundational theoretical inception to its diverse implementation platforms across optical, microwave, and acoustic frequencies. In this paper, we explore the governing principles, classify realization strategies into passive Janus dipoles, active Janus dipoles, and advanced near-field coupling control, and highlight emerging frontiers. By bridging foundational electrodynamics with advanced device engineering, this paper serves as an essential reference and roadmap for researchers designing next-generation, highly integrated, and compact wave-manipulation systems.

physics.app-ph

Scattering-robust Imaging of Azimuthal Features with Enhanced Resolution

Imaging through scattering media remains a long-standing challenge in numerous real-world applications, ranging from medical imaging to long-distance sensing. Recently, illumination consisting of a single orbital angular momentum (OAM) mode, which is structured in the azimuthal coordinate, has been shown to provide enhanced resolution for imaging objects with azimuthal features, with the resolution becoming maximum at an optimal OAM value. However, in the presence of scattering, single-mode fields, which are spatially fully coherent, cause the imaging resolution to decrease significantly due to speckle formation. In this work, we employ azimuthally partially coherent fields and experimentally demonstrate imaging of azimuthal features with enhanced resolution in the presence of scattering. We show that lower degree of azimuthal coherence in such illumination leads to increased robustness against scattering while the azimuthal structure of the illumination ensures enhanced resolution. We derive the condition for best imaging resolution, and we report increase of imaging contrast in scattering from about 7% to 50% as the illumination is changed from a single-mode fully coherent field to that of an azimuthal partially coherent field.

physics.app-ph

Influence of magnetic fields on the performance of spin-orbit torque magnetic random-access memory

Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers high speed, ultrahigh endurance, and compatibility with advanced semiconductor processes, making it a promising candidate for next-generation nonvolatile memory. However, intrinsic bias fields in magnetic tunnel junctions (MTJs), originating from reference-layer stray fields and interlayer coupling, cause asymmetric critical switching currents and increased energy consumption. Existing compensation approaches usually introduce additional magnetic layers into the MTJ stack, which increases fabrication complexity and limits wafer-scale integration. Here, we propose a bias-compensation strategy without modifying the MTJ stack by engineering local stray magnetic fields through magnetic filling materials in vertical interconnect access (VIA) channels during the back-end-of-line process. Micromagnetic simulations show that the proposed magnetic filling layer can provide the required auxiliary field for deterministic switching and significantly suppress write-current asymmetry. By optimizing the MTJ position relative to the magnetic filling structure, the write-current bias ratio is reduced from 21.6% in the conventional design to 1.3%. The approach is also applicable to in-plane magnetic anisotropy SOT-MTJs, reducing the bias ratio from 19.8% to -0.2%. Scaling analysis further demonstrates that the compensation effect remains effective when the device size is reduced to 20% of the original dimension (MTJ diameter approximately 10 nm), indicating its potential for high-density SOT-MRAM integration.

physics.app-ph