Radiation Damage Study of SensL J-Series Silicon Photomultipliers Using 101.4 MeV Protons

Alexei Ulyanov; David Murphy; Joseph Mangan; Viyas Gupta; Wojciech Hajdas; Daithi de Faoite; Brian Shortt; Lorraine Hanlon; Sheila McBreen

doi:10.1016/j.nima.2020.164203

arXiv · 2007.10919

Radiation Damage Study of SensL J-Series Silicon Photomultipliers Using 101.4 MeV Protons

Alexei Ulyanov·David Murphy·Joseph Mangan·Viyas Gupta·Wojciech Hajdas·Daithi de Faoite·Brian Shortt·Lorraine Hanlon·Sheila McBreen

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Abstract

Radiation damage of J-series silicon photomultipliers (SiPMs) has been studied in the context of using these photodetectors in future space-borne scintillation detectors. Several SiPM samples were exposed to 101.4 MeV protons, with 1 MeV neutron equivalent fluence ranging from 1.27*10^8 n/cm^2 to 1.23*10^10 n/cm^2 . After the irradiation, the SiPMs experienced a large increase in the dark current and noise, which may pose problems for long-running space missions in terms of power consumption, thermal control and detection of low-energy events. Measurements performed with a CeBr3 scintillator crystal showed that after exposure to 1.23*10^10 n/cm^2 and following room-temperature annealing, the dark noise of a single 6 mm square SiPM at room temperature increased from 0.1 keV to 2 keV. Because of the large SiPM noise, the gamma-ray detection threshold increased to approximately 20 keV for a CeBr3 detector using a 4-SiPM array and 40 keV for a detector using a 16-SiPM array. Only a small effect of the proton irradiation on the average detector signal was observed, suggesting no or little change to the SiPM gain and photon detection efficiency.

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Alexei Ulyanov, David Murphy, Joseph Mangan, Viyas Gupta, Wojciech Hajdas, Daithi de Faoite, Brian Shortt, Lorraine Hanlon, Sheila McBreen. 2020-07-21. Radiation Damage Study of SensL J-Series Silicon Photomultipliers Using 101.4 MeV Protons. https://doi.org/10.1016/j.nima.2020.164203

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