A CMOS Compatible Aluminum Scandium Nitride-based Ferroelectric Tunnel Junction Memristor

Xiwen Liu; Jeffrey Zheng; Dixiong Wang; Pariasadat Musavigharavi; Eric A. Stach; Roy Olsson III; Deep Jariwala

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arXiv · 2012.10019

A CMOS Compatible Aluminum Scandium Nitride-based Ferroelectric Tunnel Junction Memristor

Xiwen Liu·Jeffrey Zheng·Dixiong Wang·Pariasadat Musavigharavi·Eric A. Stach·Roy Olsson III·Deep Jariwala

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Abstract

We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandium doped aluminum nitride as the ferroelectric layer.

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Xiwen Liu, Jeffrey Zheng, Dixiong Wang, Pariasadat Musavigharavi, Eric A. Stach, Roy Olsson III, Deep Jariwala. 2020-12-18. A CMOS Compatible Aluminum Scandium Nitride-based Ferroelectric Tunnel Junction Memristor. https://arxiv.org/abs/2012.10019

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