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Xiwen Liu

Publications and source records attributed to Xiwen Liu.

13 recordsLinked to original sources
arXiv2026

Fully Atomic-Layer-Deposited Vertical Complementary FeRAM with Ultra-High 2Pr > 100 uC/cm2 and High Endurance > 1E10 cycles

A limited remanent polarization (Pr) in HfO2-based FeRAM remains a key obstacle to density scaling and reliability, while material and process optimizations offer only incremental improvements. This limitation fundamentally originates from the thickness-constrained switchable polarization and the intrinsic polarization ceiling of HfO2-based ferroelectrics. Here, we propose an all-ALD-grown vertical complementary FeRAM (VCF) architecture, in which the top and bottom stacked FeRAM cells maintain complementary polarization. This complementary dipole configuration converts the readout from a single-layer polarization response into a differential polarization summation, thereby amplifying the effective charge window without increasing the switching field of each individual layer or incurring area overhead. Viewed from top to bottom, an "up-down" polarization pair stores logic '1', whereas a "down-up" pair stores logic '0'. Using a complementary polarization write-read scheme, the VCF achieves an effective differential polarization above 100 uC/cm^2 and retains above 90 uC/cm^2 after 1e10 switching cycles without electrical breakdown. Robust retention (longer than 1e4 s at 85 degC) and strong disturb immunity are demonstrated, with an effective differential polarization above 80 uC/cm^2 under a V/3 scheme after 1e6 disturb pulses. Array-level operation is validated in a 5 x 5 selector-free crosspoint array. The performance enhancement of the VCF arises from the co-optimization of the all-ALD-grown process, device architecture, and operation scheme, enabling high density, a wide memory window, and strong reliability for scalable FeRAM integration.

cond-mat.mtrl-sci↗
arXiv2025

The High Voltage Splitter board for the JUNO SPMT system

The Jiangmen Underground Neutrino Observatory (JUNO) in southern China is designed to study neutrinos from nuclear reactors and natural sources to address fundamental questions in neutrino physics. Achieving its goals requires continuous operation over a 20-year period. The small photomultiplier tube (small PMT or SPMT) system is a subsystem within the experiment composed of 25600 3-inch PMTs and their associated readout electronics. The High Voltage Splitter (HVS) is the first board on the readout chain of the SPMT system and services the PMTs by providing high voltage for biasing and by decoupling the generated physics signal from the high-voltage bias for readout, which is then fed to the front-end board. The necessity to handle high voltage, manage a large channel count, and operate stably for 20 years imposes significant constraints on the physical design of the HVS. This paper serves as a comprehensive documentation of the HVS board: its role in the SPMT readout system, the challenges in its design, performance and reliability metrics, and the methods employed for production and quality control.

physics.ins-det↗
arXiv2025

Can a ferroelectric diode be a selector-less, universal, non-volatile memory?

Recent advances in silicon foundry-process compatible ferroelectric (FE) thin films have reinvigorated interest in FE-based non-volatile memory (NVM) devices. Ferroelectric diodes (FeDs) are two-terminal NVM devices exhibiting rectifying current-voltage hysteretic characteristics that enable self-selecting designs critical for high-density memory. We examine progress in FeDs based on CMOS-compatible HZO, AlScN, and emerging van der Waals ferroelectrics. While FeDs demonstrate promising ON/OFF ratios and rectification capabilities, they face persistent challenges including limited write-cycling endurance, elevated operating voltages, and insufficient read currents. We provide materials-focused strategies to enhance reliability and performance of FeDs for energy-efficient electronic memory applications, with emphasis on their unique self-rectifying capabilities that eliminate the need for selector elements in crossbar arrays for compute in memory applications.

cond-mat.mtrl-sci↗
arXiv2024

Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes

The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data-centric processing. Data-centric processing require innovations at device level to enable novel compute-in-memory (CIM) operations. A key challenge in construction of CIM architectures is the conflicting trade-off between the performance and their flexibility for various essential data operations. Here, we present a transistor-free CIM architecture that permits storage, search and neural network operations on sub-50nm thick Aluminum Scandium Nitride ferroelectric diodes (FeDs). Our circuit designs and devices can be directly integrated on top of Silicon microprocessors in a scalable process. By leveraging the field-programmability, non-volatility and non-linearity of FeDs, search operations are demonstrated with a cell footprint < 0.12 um2 when projected onto 45-nm node technology. We further demonstrate neural network operations with 4-bit operation using FeDs. Our results highlight FeDs as candidates for efficient and multifunctional CIM platforms.

physics.app-ph↗
arXiv2023

Analog Content-Addressable Memory from Complementary FeFETs

To address the increasing computational demands of artificial intelligence (AI) and big data, compute-in-memory (CIM) integrates memory and processing units into the same physical location, reducing the time and energy overhead of the system. Despite advancements in non-volatile memory (NVM) for matrix multiplication, other critical data-intensive operations, like parallel search, have been overlooked. Current parallel search architectures, namely content-addressable memory (CAM), often use binary, which restricts density and functionality. We present an analog CAM (ACAM) cell, built on two complementary ferroelectric field-effect transistors (FeFETs), that performs parallel search in the analog domain with over 40 distinct match windows. We then deploy it to calculate similarity between vectors, a building block in the following two machine learning problems. ACAM outperforms ternary CAM (TCAM) when applied to similarity search for few-shot learning on the Omniglot dataset, yielding projected simulation results with improved inference accuracy by 5%, 3x denser memory architecture, and more than 100x faster speed compared to central processing unit (CPU) and graphics processing unit (GPU) per similarity search on scaled CMOS nodes. We also demonstrate 1-step inference on a kernel regression model by combining non-linear kernel computation and matrix multiplication in ACAM, with simulation estimates indicating 1,000x faster inference than CPU and GPU.

cs.ET↗
arXiv2023

Accelerate & Actualize: Can 2D Materials Bridge the Gap Between Neuromorphic Hardware and the Human Brain?

Two-dimensional (2D) materials present an exciting opportunity for devices and systems beyond the von Neumann computing architecture paradigm due to their diversity of electronic structure, physical properties, and atomically-thin, van der Waals structures that enable ease of integration with conventional electronic materials and silicon-based hardware. All major classes of non-volatile memory (NVM) devices have been demonstrated using 2D materials, including their operation as synaptic devices for applications in neuromorphic computing hardware. Their atomically-thin structure, superior physical properties, i.e., mechanical strength, electrical and thermal conductivity, as well as gate-tunable electronic properties provide performance advantages and novel functionality in NVM devices and systems. However, device performance and variability as compared to incumbent materials and technology remain major concerns for real applications. Ultimately, the progress of 2D materials as a novel class of electronic materials and specifically their application in the area of neuromorphic electronics will depend on their scalable synthesis in thin-film form with desired crystal quality, defect density, and phase purity.

cond-mat.mes-hall↗
arXiv2021

2D Metal Selenide-Silicon Steep Sub-Threshold Heterojunction Triodes with High On-Current Density

Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that exploit direct band-to-band tunneling of charges and exhibit steep sub-threshold slope (SS) transfer characteristics are an attractive option in this regard. However, current generation of Si and III-V heterojunction based TFETs while suffer from low ON current density and ON/OFF current ratios for < 60 mV/dec operation. Semiconducting two-dimensional (2D) layers have recently renewed enthusiasm in novel device design for TFETs not only because of their atomically-thin bodies that favor superior electrostatic control but the same feature also favors higher ON current density and consequently high ON/OFF ratio. Here, we demonstrate gate-tunable heterojunction diodes (triodes) fabricated from InSe/Si 2D/3D van der Waals heterostructures, with a minimum subthreshold swing (SS) as low as 6.4 mV/dec and an SS average of 30 mV/dec over 4 decades of current. Further, the devices show a large current on/off ratio of approximately 10^6 and on-state current density of 0.3 uA/um at a drain bias of -1V. Our work opens new avenues for 2D semiconductors for 3D hetero-integration with Si to achieve ultra-low power logic devices.

physics.app-ph↗
arXiv2021

Mass production and characterization of 3-inch PMTs for the JUNO experiment

26,000 3-inch photomultiplier tubes (PMTs) have been produced for Jiangmen Underground Neutrino Observatory (JUNO) by the Hainan Zhanchuang Photonics Technology Co., Ltd (HZC) company in China and passed all acceptance tests with only 15 tubes rejected. The mass production began in 2018 and elapsed for about 2 years at a rate of $\sim$1,000~PMTs per month. The characterization of the PMTs was performed in the factory concurrently with production as a joint effort between HZC and JUNO. Fifteen performance parameters were tracked at different sampling rates, and novel working strategies were implemented to improve quality assurance. This constitutes the largest sample of 3-inch PMTs ever produced and studied in detail to date.

physics.ins-det↗
arXiv2020

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor

In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a ferroelectric field-effect transistor (FE-FET). However, subsequent efforts to produce a practical, compact FE-FET have been plagued by low retention and incompatibility with Complementary Metal Oxide Semiconductor (CMOS) process integration. These difficulties led to the development of trapped-charge based memory devices (also called floating gate or flash memory), and these are now the mainstream non-volatile memory (NVM) technology. Over the past two decades, advances in oxide FE materials have rejuvenated the field of ferroelectrics and made FE random access memories (FE-RAM) a commercial reality. Despite these advances, commercial FE-RAM based on lead zirconium titanate (PZT) has stalled at the 130 nm due to process challenges.The recent discovery of scandium doped aluminum nitride (AlScN) as a CMOS compatible ferroelectric presents new opportunities for direct memory integration with logic transistors due to the low temperature of AlScN deposition (approx. 350 C). This temperature is compatible with CMOS back end of line processes. Here, we present a FE-FET device composed of an AlScN FE dielectric layer integrated with a channel layer of a van der Waals two-dimensional (2D) semiconductor, MoS2. Our devices show an ON/OFF ratio ~ 10^6, concurrent with a normalized memory window of 0.3 V/nm. The devices also demonstrate stable, two-state memory retention for up to 10^4 seconds. Our simulations and experimental results suggest that the combination of AlScN and 2D semiconductors is nearly ideal for low power FE-FET memory. These results demonstrate a new approach in embedded memory and in-memory computing, and could even lead to effective neuromorphic computing architectures.

physics.app-ph↗
arXiv2020

Giant gate-tunability of complex refractive index in semiconducting carbon nanotubes

Electrically-tunable optical properties in materials are desirable for many applications ranging from displays to lasing and optical communication. In most two-dimensional thin-films and other quantum confined materials, these constants have been measured accurately. However, the optical constants of single wall nanotubes (SWCNT) as a function of electrostatic tuning are yet to be measured due to lack of electronic purity and spatial homogeneity over large areas. Here, we measure the basic optical constants of ultrathin high-purity (>99%) semiconducting single wall carbon nanotube (s-SWCNT) films with spectroscopic ellipsometry. We extract the gate-tunable complex refractive index of s-SWCNT films and observe giant modulation of the real refractive index (~11.2% or an absolute value of >0.2) and extinction coefficient (~11.6%) in the near-infrared (IR) region (1.3-1.55 μm) induced by the applied electric field significantly higher than all existing electro-optic semiconductors in this wavelength range. We further design a multilayer IR reflection phase modulator stack by combining s-SWCNT and monolayer MoS2 heterostructures that can attain >45° reflection phase modulation at 1600 nm wavelength for < 200 nm total stack thickness. Our results highlight s-SWCNT as a promising material system for infrared photonics and electro-optics in telecommunication applications.

physics.optics↗
arXiv2020

Side-On transition radiation detector: a detector prototype for TeV energy scale calibration of calorimeters in space

Transition Radiation (TR) plays an important role in particle identification in high-energy physics and its characteristics provide a feasible method of energy calibration in the energy range up to 10 TeV, which is of interest for dark matter searches in cosmic rays. In a Transition Radiation Detector (TRD), the TR signal is superimposed onto the ionization energy loss signal induced by incident charged particles. In order to make the TR signal stand out from the background of ionization energy loss in a significant way, we optimized both the radiators and the detector. We have designed a new prototype of regular radiator optimized for a maximal TR photon yield, combined with the Side-On TRD which is supposed to improve the detection efficiency of TR. We started a test beam experiment with the Side-On TRD at Conseil Européen pour la Recherche Nucléaire (CERN), and found that the experimental data is consistent with the simulation results.

astro-ph.IM↗
arXiv2020

Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) layers that enable superior electrostatic control. These attributes have led to numerous demonstrations of field-effect devices ranging from transistors to triodes. By exploiting the controlled, substitutional doping schemes in covalently-bonded, three-dimensional (3D) semiconductors and the passivated surfaces of 2D semiconductors, one can construct devices that can exceed performance metrics of 'all-2D' vdW heterojunctions. Here, we demonstrate, 2D/3D semiconductor heterojunctions using MoS2 as the prototypical 2D semiconductor laid upon Si and GaN as the 3D semiconductor layers. By tuning the Fermi levels in MoS2, we demonstrate devices that concurrently exhibit over seven orders of magnitude modulation in rectification ratios and conductance. Our results further suggest that the interface quality does not necessarily affect Fermi-level tuning at the junction opening up possibilities for novel 2D/3D heterojunction device architectures.

cond-mat.mes-hall↗