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arXiv · 2102.03929

A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration

R. Li·N. I. Dumoulin Stuyck·S. Kubicek·J. Jussot·B. T. Chan·F. A. Mohiyaddin·A. Elsayed·M. Shehata·G. Simion·C. Godfrin·Y. Canvel·Ts. Ivanov·L. Goux·B. Govoreanu·I. P. Radu
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Abstract

We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic implants, a pitch smaller than 100 nm, and uniform critical dimensions down to 30 nm with a standard deviation ~ 1.6 nm. Various n- and p-type qubits are characterized in a dilution refrigerator at temperatures ~ 10 mK. Electrical measurements demonstrate well-defined quantum dots, tunable tunnel couplings, and coherent spin control, which are essential requirements for the implementation of a large-scale quantum processor.

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R. Li, N. I. Dumoulin Stuyck, S. Kubicek, J. Jussot, B. T. Chan, F. A. Mohiyaddin, A. Elsayed, M. Shehata, G. Simion, C. Godfrin, Y. Canvel, Ts. Ivanov, L. Goux, B. Govoreanu, I. P. Radu. 2021-02-07. A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration. https://arxiv.org/abs/2102.03929

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