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arXiv · 2104.14464

Thickness Dependence of Magneto-transport Properties in Tungsten Ditelluride

Xurui Zhang·Vivek Kakani·John M. Woods·Judy J. Cha·Xiaoyan Shi
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Abstract

We investigate the electronic structure of tungsten ditelluride (WTe$_2$) flakes with different thicknesses in magneto-transport studies. The temperature-dependent resistance and magnetoresistance (MR) measurements both confirm the breaking of carrier balance induced by thickness reduction, which suppresses the `turn-on' behavior and large positive MR. The Shubnikov-de-Haas oscillation studies further confirm the thickness-dependent change of electronic structure of WTe$_2$ and reveal a possible temperature-sensitive electronic structure change. Finally, we report the thickness-dependent anisotropy of Fermi surface, which reveals that multi-layer WTe$_2$ is an electronic 3D material and the anisotropy decreases as thickness decreases.

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Xurui Zhang, Vivek Kakani, John M. Woods, Judy J. Cha, Xiaoyan Shi. 2021-04-29. Thickness Dependence of Magneto-transport Properties in Tungsten Ditelluride. https://doi.org/10.1103/physrevb.104.165126

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