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arXiv · 2106.04246

A small-signal description of black phosphorus transistor technologies for high-frequency applications

Leslie Valdez-Sandoval·Eloy Ramirez-Garcia·Saungeun Park·Deji Akinwande·David Jimenez·Anibal Pacheco-Sanchez
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Abstract

This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorous field-effect transistors (BPFETs). The proposed EC is able to describe correctly both the experimental HF intrinsic and extrinsic figures of merit, as well as S-parameters, from different BPFET technologies. Single- and double-stage radio frequency gain amplifiers, are designed at 2.4 GHz using the experimentally-calibrated small-signal BPFET EC. Results show high-gain high-selective BPFET-based amplifiers.

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Leslie Valdez-Sandoval, Eloy Ramirez-Garcia, Saungeun Park, Deji Akinwande, David Jimenez, Anibal Pacheco-Sanchez. 2021-06-08. A small-signal description of black phosphorus transistor technologies for high-frequency applications. https://doi.org/10.1109/lmwc.2021.3086047

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