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arXiv · 2107.03014

Structural and WAL analysis of Topological single-crystal SnSb2Te4

Ankush Saxena·M. M. Sharma·Prince Sharma·Yogesh Kumar·Poonam Rani·M. Singh·S. Patnaik·V. P. S. Awana
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Abstract

Here, we report successful single crystal growth of SnSb2Te4 using the self-flux method. Unidirectional crystal growth is confirmed through X Ray Diffraction (XRD) pattern taken on mechanically cleaved crystal flake while the rietveld refined Powder XRD (PXRD) pattern confirms the phase purity of the grown crystal. Scanning Electron Microscopy (SEM) image and Energy Dispersive X-Ray analysis (EDAX) confirm crystalline morphology and exact stoichiometry of constituent elements. Vibrational Modes observed in Raman spectra also confirm the formation of the SnSb2Te4 phase. DC resistivity measurements confirm the metallic character of the grown crystal. Magneto-transport measurements up to 5T show a nonsaturating low magneto-resistance percentage. V type cusp and Hikami Larkin Nagaoka (HLN) fitting at lower field confirms the Weak Anti-localization (WAL) effect in SnSb2Te4. Density Functional Theory (DFT) calculations were showing topological non-trivial electronic band structure. It is the first-ever report on MR study and WAL analysis of SnSb2Te4 single crystal.

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Ankush Saxena, M. M. Sharma, Prince Sharma, Yogesh Kumar, Poonam Rani, M. Singh, S. Patnaik, V. P. S. Awana. 2021-07-07. Structural and WAL analysis of Topological single-crystal SnSb2Te4. https://arxiv.org/abs/2107.03014

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