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arXiv · 2107.08413

Degradation mechanism of 0.15 um AlGaN/GaN HEMTs: effects of hot electrons

Z. Gao·F. Rampazzo·M. Meneghini·C. De Santi·F. Chiocchetta·D. Marcon·G. Meneghesso·E. Zanoni
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Abstract

The degradation mechanisms of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration were investigated by means of hot-electron step stress and 24 hours stress tests. Firstly, DC and EL characterization at room temperature are summarized, then the parametric evolution during hot-electron step stress tests at the semi-on state was compared, the assumption for the degradation mechanism is that hot-electrons activated the pre-existing traps in the buffer, attenuate the electric field in the gate drain access region and damaging the gate contact, the parametric evolution during constant stresses is discussed.

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Z. Gao, F. Rampazzo, M. Meneghini, C. De Santi, F. Chiocchetta, D. Marcon, G. Meneghesso, E. Zanoni. 2021-07-18. Degradation mechanism of 0.15 um AlGaN/GaN HEMTs: effects of hot electrons. https://doi.org/10.1016/j.microrel.2020.113905

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