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arXiv · 2110.09331

Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlO$_{x}$-Based Resistive Switching Memory Devices with Magneto-Resistive Responses

Jhen-Yong Hong·Chun-Yen Chen·Dah-Chin Ling·Isidoro Martínez·César González-Ruano·Farkhad G. Aliev
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Abstract

Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlO$_{x}$-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and magneto-resistive (MR) effects. A 1/f$^{\gamma}$ noise power spectral density is observed in a wide range of applied voltage biases. By analyzing the experimental data within the framework of Hooge's empirical relation, we found that the Hooge's parameter $\alpha$ and the exponent $\gamma$ exhibit a distinct variation upon the resistance transition from the low resistance state (LRS) to the high resistance state (HRS), providing strong evidence that the electron trapping/de-trapping process, along with the electric field-driven oxygen vacancy migration in the AlO$_x$ barrier, plays an essential role in the charge transport dynamics of AlO$_x$-based RS memory devices.

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Jhen-Yong Hong, Chun-Yen Chen, Dah-Chin Ling, Isidoro Martínez, César González-Ruano, Farkhad G. Aliev. 2021-10-18. Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlO$_{x}$-Based Resistive Switching Memory Devices with Magneto-Resistive Responses. https://doi.org/10.3390/electronics10202525

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