Solid Phase Recrystallization and Dopant Activation in Arsenic Ion-Implanted Silicon-On-Insulator by UV Laser Annealing

Toshiyuki Tabata; Fabien Rozé; Pablo Acosta Alba; Sébastien Halty; Pierre-Edouard Raynal; Imen Karmous; Sébastien Kerdilès; Fulvio Mazzamuto

arXiv · 2111.07577

Solid Phase Recrystallization and Dopant Activation in Arsenic Ion-Implanted Silicon-On-Insulator by UV Laser Annealing

Toshiyuki Tabata·Fabien Rozé·Pablo Acosta Alba·Sébastien Halty·Pierre-Edouard Raynal·Imen Karmous·Sébastien Kerdilès·Fulvio Mazzamuto

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Abstract

UV laser annealing (UV-LA) enables surface-localized high-temperature thermal processing to form abrupt junctions in emerging monolithically stacked devices, where applicable thermal budget is restricted. In this work, UV-LA is performed to regrow a SOI layer partially amorphized by arsenic ion implantation and to activate the dopants. In a microsecond scale (~10^-6 s to ~10^-5 s) UV-LA process, monocrystalline solid phase recrystallization and dopant activation without junction deepening is evidenced, thus opening various applications in low thermal budget integration flows.

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Toshiyuki Tabata, Fabien Rozé, Pablo Acosta Alba, Sébastien Halty, Pierre-Edouard Raynal, Imen Karmous, Sébastien Kerdilès, Fulvio Mazzamuto. 2021-11-15. Solid Phase Recrystallization and Dopant Activation in Arsenic Ion-Implanted Silicon-On-Insulator by UV Laser Annealing. https://arxiv.org/abs/2111.07577

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