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arXiv · 2112.00943

Sub-10 nm precision engineering of solid-state defects via nanoscale aperture array mask

Tae-yeon Hwang·Junghyun Lee·Seong-Woo Jeon·Yong-Su Kim·Young-Wook Cho·Hyang-Tag Lim·Sung Moon·Sang-Wook Han·Yong-Ho Choa·Hojoong Jung
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Abstract

Engineering a strongly interacting uniform qubit cluster would be a major step towards realizing a scalable quantum system for quantum sensing, and a node-based qubit register. For a solid-state system that uses a defect as a qubit, various methods to precisely position defects have been developed, yet the large-scale fabrication of qubits within the strong coupling regime at room temperature continues to be a challenge. In this work, we generate nitrogen vacancy (NV) color centers in diamond with sub-10 nm scale precision by using a combination of nanoscale aperture arrays (NAAs) with a high aspect ratio of 10 and a secondary E-beam hole pattern used as an ion-blocking mask. We perform optical and spin measurements on a small cluster of NV spins and statistically investigate the effect of the NAAs during an ion-implantation process. We discuss how this technique is effective for constructing a scalable system.

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Tae-yeon Hwang, Junghyun Lee, Seong-Woo Jeon, Yong-Su Kim, Young-Wook Cho, Hyang-Tag Lim, Sung Moon, Sang-Wook Han, Yong-Ho Choa, Hojoong Jung. 2021-12-02. Sub-10 nm precision engineering of solid-state defects via nanoscale aperture array mask. https://doi.org/10.1021/acs.nanolett.1c04699

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