Drive high power UVC-LED wafer into low-cost 4-inch era: effect of strain modulation

Abstract

Ultraviolet-C light-emitting diodes (UVC-LEDs) have great application in pathogen inactivation under various kinds of situations, especially in the fight against the COVID-19. Unfortunately, its epitaxial wafers are so far limited to 2-inch size, which greatly increases the cost of massive production. In this work, we report the 4-inch crack-free high-power UVC-LED wafer. This achievement relies on a proposed strain-tailored strategy, where a three-dimensional to two-dimensional (3D-2D) transition layer is introduced during the homo-epitaxy of AlN on high temperature annealed (HTA)-AlN template, which successfully drives the original compressive strain into tensile one and thus solves the challenge of realizing high quality Al$_{0.6}$Ga$_{0.4}$N layer with a flat surface. This smooth Al$_{0.6}$Ga$_{0.4}$N layer is nearly pseudomorphically grown on the strain-tailored HTA-AlN template, leading to 4-inch UVC-LED wafers with outstanding performances. Our strategy succeeds in compromising the bottlenecked contradictory in producing large-sized UVC-LED wafer on pronounced crystalline AlN template: The compressive strain in HTA-AlN allows for crack-free 4-inch wafer, but at the same time leads to a deterioration of the AlGaN morphology and crystal quality. The launch of 4-inch wafers makes the chip fabrication process of UVC-LEDs matches the mature blue one, and will definitely speed up the universal of UVC-LED in daily life.