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arXiv · 2112.06373

Low-Frequency Noise Characteristics of GaN Vertical PIN Diodes -- Effects of Current and Temperature

Subhajit Ghosh·Kai Fu·Fariborz Kargar·Sergey Rumyantsev·Yuji Zhao·Alexander A. Balandin
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Abstract

We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects of the diode design, current and temperature. The as-grown and regrown diodes, with and without surface treatment have been studied. The noise in most of the GaN devices had a characteristic 1/f spectrum at high and moderate currents, while some devices revealed generation-recombination bulges at low currents (f is the frequency). The predominant trend of the noise spectral density, S, dependence on the current was S ~ I. All tested GaN PIN diodes had rather low normalized noise spectral densities of 10^-18 cm2/Hz -- 10^-16 cm2/Hz (f=10 Hz) at the current density J=1 A/cm2 at room temperature. The noise temperature dependences at different currents revealed peaks at T=375 K -- 400 K. Temperature, current, and frequency dependences of noise suggest that the noise mechanism is of the recombination origin. We argue that the noise measurements at low currents can be used to efficiently assess the quality of GaN PIN diodes.

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Subhajit Ghosh, Kai Fu, Fariborz Kargar, Sergey Rumyantsev, Yuji Zhao, Alexander A. Balandin. 2021-12-13. Low-Frequency Noise Characteristics of GaN Vertical PIN Diodes -- Effects of Current and Temperature. https://doi.org/10.1063/5.0075498

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