Investigation of Mixed Irradiation Effects in p-MCz Thin Silicon Microstrip Detector for the HL-LHC Experiments

Abstract

A lot of R & D work is carried out in the CERN RD50 Collaboration to find out the best material for the Si detectors that can be used in the harsh radiation environment of HL-LHC, n and p-MCz Si was identified as one of the prime candidates as a material for strip detector that can be chosen the phase 2 upgrade plan of the new Compact Muon Solenoid tracker detector in 2026. For the very first time, in this work, an advanced four level deep-trap mixed irradiation model for p-MCz Si is proposed by the comparison of experimental data on the full depletion voltage and leakage current to the Shockley Read Hall recombination statistics results on the mixed irradiated p-MCz Si PAD detector. In this work, we have determined the effective introduction rate {\eta}eff of shallower donor deep trap E30 K using SRH theory calculations for exp. Neff and that can shown the behavior of space charges and electric field distribution in the p-MCz Si strip detector and compared its value with the Neff of shallower donor deep trap E30 K in the n -MCz Si microstrip detector. Prediction uncertainty in the p-MCz Si radiation damage mixed irradiation model considered in the full depletion voltage and leakage current. A very good agreement is observed in the experimental and SRH results. This radiation damage models also used to extrapolate the value of the full depletion voltage at different mixed (proton + neutron) higher irradiation fluences for the thin p-MCz Si microstrip detector.