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arXiv · 2203.09240

Continuous-Wave Second-Harmonic Generation in Orientation-Patterned GaP Waveguides at Telecom Wavelengths

Abstract

A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation configurations. The highest observed conversion efficiency is \SI{200}{\percent\per\watt\per\centi\meter\squared}, with a bandwidth of \SI{2.67}{\nano\meter} in a \SI{1}{\milli\meter}-long waveguide. The variation of the conversion efficiency with wavelength closely follows a squared cardinal sine function, in excellent agreement with theory, confirming the good uniformity of the poling period over the entire length of the waveguide.

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Konstantinos Pantzas, Sylvain Combrié, Myriam Bailly, Raphaël Mandouze, Francesco Rinaldi Talenti, Abdelmounaim Harouri, Bruno Gérard, Grégoire Beaudoin, Luc Le Gratiet, Gilles Patriarche, Alfredo de Rossi, Yoan Léger, Isabelle Sagnes, Arnaud Grisard. 2022-03-17. Continuous-Wave Second-Harmonic Generation in Orientation-Patterned GaP Waveguides at Telecom Wavelengths. https://arxiv.org/abs/2203.09240

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